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Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance

Research output: Thesis › Doctoral Thesis

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Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance. / Zhang, Zhongming.
Lancaster University, 2024. 173 p.

Research output: Thesis › Doctoral Thesis

Harvard

Zhang, Z 2024, 'Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance', PhD, Lancaster University. https://doi.org/10.17635/lancaster/thesis/2425

APA

Zhang, Z. (2024). Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance. [Doctoral Thesis, Lancaster University]. Lancaster University. https://doi.org/10.17635/lancaster/thesis/2425

Vancouver

Zhang Z. Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance. Lancaster University, 2024. 173 p. doi: 10.17635/lancaster/thesis/2425

Author

Zhang, Zhongming. / Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance. Lancaster University, 2024. 173 p.

Bibtex

@phdthesis{595d84b299734329b1d8f5c268c0bfbe,
title = "Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance",
abstract = "In semiconductor neutron detectors with a layered structure, the fundamentalstructure consists of a converter layer and a semiconductor layer. It has been shown in research focused on these detectors that the thicknesses of both the converter and semiconductor layers crucially impact the efficiency of neutron detection.However, there is a notable scarcity of studies that determine the optimalthickness of the converter layer and the corresponding optimal thickness of thesemiconductor layer, especially using direct theoretical formulas for the efficiency of the converter layer. This lack of research is particularly evident for wide-bandgap semiconductor materials such as diamond, silicon carbide (SiC), gallium oxide (Ga2O3), gallium nitride (GaN), and the perovskite material caesium lead bromide (CsPbBr3).Herein, on the basis of theoretical studies about the efficiency of layered semiconductor detectors, a systematic method has been proposed for calculating the optimal thicknesses for two types of converter layers. This method has been implemented in computational software. By inputting the macroscopic cross-section ",
author = "Zhongming Zhang",
year = "2024",
doi = "10.17635/lancaster/thesis/2425",
language = "English",
publisher = "Lancaster University",
school = "Lancaster University",

}

RIS

TY - BOOK

T1 - Guidance on Thickness Design for Wide-Bandgap Semiconductor Thermal Neutron Detectors with Layered Structure and Research on Their Microscopic Radiation Resistance

AU - Zhang, Zhongming

PY - 2024

Y1 - 2024

N2 - In semiconductor neutron detectors with a layered structure, the fundamentalstructure consists of a converter layer and a semiconductor layer. It has been shown in research focused on these detectors that the thicknesses of both the converter and semiconductor layers crucially impact the efficiency of neutron detection.However, there is a notable scarcity of studies that determine the optimalthickness of the converter layer and the corresponding optimal thickness of thesemiconductor layer, especially using direct theoretical formulas for the efficiency of the converter layer. This lack of research is particularly evident for wide-bandgap semiconductor materials such as diamond, silicon carbide (SiC), gallium oxide (Ga2O3), gallium nitride (GaN), and the perovskite material caesium lead bromide (CsPbBr3).Herein, on the basis of theoretical studies about the efficiency of layered semiconductor detectors, a systematic method has been proposed for calculating the optimal thicknesses for two types of converter layers. This method has been implemented in computational software. By inputting the macroscopic cross-section

AB - In semiconductor neutron detectors with a layered structure, the fundamentalstructure consists of a converter layer and a semiconductor layer. It has been shown in research focused on these detectors that the thicknesses of both the converter and semiconductor layers crucially impact the efficiency of neutron detection.However, there is a notable scarcity of studies that determine the optimalthickness of the converter layer and the corresponding optimal thickness of thesemiconductor layer, especially using direct theoretical formulas for the efficiency of the converter layer. This lack of research is particularly evident for wide-bandgap semiconductor materials such as diamond, silicon carbide (SiC), gallium oxide (Ga2O3), gallium nitride (GaN), and the perovskite material caesium lead bromide (CsPbBr3).Herein, on the basis of theoretical studies about the efficiency of layered semiconductor detectors, a systematic method has been proposed for calculating the optimal thicknesses for two types of converter layers. This method has been implemented in computational software. By inputting the macroscopic cross-section

U2 - 10.17635/lancaster/thesis/2425

DO - 10.17635/lancaster/thesis/2425

M3 - Doctoral Thesis

PB - Lancaster University

ER -