Home > Research > Publications & Outputs > High electron mobility through the edge states ...

Research

Links

Text available via DOI:

View graph of relations

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. / Bhasker, H.P.; Dhar, S.; Kesaria, Manoj et al.
In: Applied Physics Letters, Vol. 101, No. 13, 24.09.2012, p. 132109-132113.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Bhasker, HP, Dhar, S, Kesaria, M, Sain, A & Shivaprasad, SM 2012, 'High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy', Applied Physics Letters, vol. 101, no. 13, pp. 132109-132113. https://doi.org/10.1063/1.4755775

APA

Bhasker, H. P., Dhar, S., Kesaria, M., Sain, A., & Shivaprasad, S. M. (2012). High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters, 101(13), 132109-132113. https://doi.org/10.1063/1.4755775

Vancouver

Bhasker HP, Dhar S, Kesaria M, Sain A, Shivaprasad SM. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters. 2012 Sept 24;101(13):132109-132113. doi: 10.1063/1.4755775

Author

Bhasker, H.P. ; Dhar, S. ; Kesaria, Manoj et al. / High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. In: Applied Physics Letters. 2012 ; Vol. 101, No. 13. pp. 132109-132113.

Bibtex

@article{35575b88b8e24832bf27c836decaaa20,
title = "High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy",
abstract = "Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls. ",
author = "H.P. Bhasker and S. Dhar and Manoj Kesaria and A. Sain and Shivaprasad, {S. M.}",
year = "2012",
month = sep,
day = "24",
doi = "10.1063/1.4755775",
language = "English",
volume = "101",
pages = "132109--132113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

AU - Bhasker, H.P.

AU - Dhar, S.

AU - Kesaria, Manoj

AU - Sain, A.

AU - Shivaprasad, S. M.

PY - 2012/9/24

Y1 - 2012/9/24

N2 - Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

AB - Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

U2 - 10.1063/1.4755775

DO - 10.1063/1.4755775

M3 - Journal article

VL - 101

SP - 132109

EP - 132113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -