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High gain InAs electron-avalanche photodiodes for optical communication

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High gain InAs electron-avalanche photodiodes for optical communication. / Marshall, A. R. J.; Vines, P.; Xie, S. et al.
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York: IEEE, 2010. p. -.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Marshall, ARJ, Vines, P, Xie, S, David, JPR & Tan, CH 2010, High gain InAs electron-avalanche photodiodes for optical communication. in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, New York, pp. -, 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, 31/05/10. https://doi.org/10.1109/ICIPRM.2010.5516221

APA

Marshall, A. R. J., Vines, P., Xie, S., David, J. P. R., & Tan, C. H. (2010). High gain InAs electron-avalanche photodiodes for optical communication. In 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (pp. -). IEEE. https://doi.org/10.1109/ICIPRM.2010.5516221

Vancouver

Marshall ARJ, Vines P, Xie S, David JPR, Tan CH. High gain InAs electron-avalanche photodiodes for optical communication. In 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York: IEEE. 2010. p. - doi: 10.1109/ICIPRM.2010.5516221

Author

Marshall, A. R. J. ; Vines, P. ; Xie, S. et al. / High gain InAs electron-avalanche photodiodes for optical communication. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York : IEEE, 2010. pp. -

Bibtex

@inproceedings{e585e31473604e4299246f26a5b2fa0b,
title = "High gain InAs electron-avalanche photodiodes for optical communication",
abstract = "We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.",
author = "Marshall, {A. R. J.} and P. Vines and S. Xie and David, {J. P. R.} and Tan, {C. H.}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516221",
language = "English",
isbn = "978-1-4244-5920-9",
pages = "--",
booktitle = "2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)",
publisher = "IEEE",
note = "22nd International Conference on Indium Phosphide and Related Materials ; Conference date: 31-05-2010 Through 04-06-2010",

}

RIS

TY - GEN

T1 - High gain InAs electron-avalanche photodiodes for optical communication

AU - Marshall, A. R. J.

AU - Vines, P.

AU - Xie, S.

AU - David, J. P. R.

AU - Tan, C. H.

PY - 2010

Y1 - 2010

N2 - We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.

AB - We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.

U2 - 10.1109/ICIPRM.2010.5516221

DO - 10.1109/ICIPRM.2010.5516221

M3 - Conference contribution/Paper

SN - 978-1-4244-5920-9

SP - -

BT - 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

PB - IEEE

CY - New York

T2 - 22nd International Conference on Indium Phosphide and Related Materials

Y2 - 31 May 2010 through 4 June 2010

ER -