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Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells. / Wagener, Magnus C. ; Montesdeoca Cardenes, Denise; Lu, Qi et al.
In: Solar Energy Materials and Solar Cells, Vol. 189, 01.2019, p. 233-238.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Wagener, MC, Montesdeoca Cardenes, D, Lu, Q, Marshall, ARJ, Krier, A, Botha, JR & Carrington, PJ 2019, 'Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells', Solar Energy Materials and Solar Cells, vol. 189, pp. 233-238. https://doi.org/10.1016/j.solmat.2018.07.030

APA

Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R., & Carrington, P. J. (2019). Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells. Solar Energy Materials and Solar Cells, 189, 233-238. https://doi.org/10.1016/j.solmat.2018.07.030

Vancouver

Wagener MC, Montesdeoca Cardenes D, Lu Q, Marshall ARJ, Krier A, Botha JR et al. Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells. Solar Energy Materials and Solar Cells. 2019 Jan;189:233-238. Epub 2018 Aug 28. doi: 10.1016/j.solmat.2018.07.030

Author

Wagener, Magnus C. ; Montesdeoca Cardenes, Denise ; Lu, Qi et al. / Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells. In: Solar Energy Materials and Solar Cells. 2019 ; Vol. 189. pp. 233-238.

Bibtex

@article{6004b4200e5f43a2876857d32762c4a5,
title = "Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells",
abstract = "The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.",
keywords = "Capture cross-section, Interband, Intermediate band, Intraband, Optoelectronic properties, Quantum dot solar cell",
author = "Wagener, {Magnus C.} and {Montesdeoca Cardenes}, Denise and Qi Lu and Marshall, {Andrew Robert Julian} and Anthony Krier and Botha, {Johannes Reinhardt} and Carrington, {Peter James}",
year = "2019",
month = jan,
doi = "10.1016/j.solmat.2018.07.030",
language = "English",
volume = "189",
pages = "233--238",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

AU - Wagener, Magnus C.

AU - Montesdeoca Cardenes, Denise

AU - Lu, Qi

AU - Marshall, Andrew Robert Julian

AU - Krier, Anthony

AU - Botha, Johannes Reinhardt

AU - Carrington, Peter James

PY - 2019/1

Y1 - 2019/1

N2 - The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.

AB - The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.

KW - Capture cross-section

KW - Interband

KW - Intermediate band

KW - Intraband

KW - Optoelectronic properties

KW - Quantum dot solar cell

U2 - 10.1016/j.solmat.2018.07.030

DO - 10.1016/j.solmat.2018.07.030

M3 - Journal article

VL - 189

SP - 233

EP - 238

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -