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Identifying passivated dynamic force microscopy tips on H:Si(100)

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Identifying passivated dynamic force microscopy tips on H:Si(100). / Sharp, Peter; Jarvis, Samuel; Woolley, Richard et al.
In: Applied Physics Letters, Vol. 100, No. 23, 233120, 04.06.2012.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Sharp, P, Jarvis, S, Woolley, R, Sweetman, A, Kantorovich, L, Pakes, C & Moriarty, P 2012, 'Identifying passivated dynamic force microscopy tips on H:Si(100)', Applied Physics Letters, vol. 100, no. 23, 233120. https://doi.org/10.1063/1.4726086

APA

Sharp, P., Jarvis, S., Woolley, R., Sweetman, A., Kantorovich, L., Pakes, C., & Moriarty, P. (2012). Identifying passivated dynamic force microscopy tips on H:Si(100). Applied Physics Letters, 100(23), Article 233120. https://doi.org/10.1063/1.4726086

Vancouver

Sharp P, Jarvis S, Woolley R, Sweetman A, Kantorovich L, Pakes C et al. Identifying passivated dynamic force microscopy tips on H:Si(100). Applied Physics Letters. 2012 Jun 4;100(23):233120. doi: 10.1063/1.4726086

Author

Sharp, Peter ; Jarvis, Samuel ; Woolley, Richard et al. / Identifying passivated dynamic force microscopy tips on H:Si(100). In: Applied Physics Letters. 2012 ; Vol. 100, No. 23.

Bibtex

@article{eed06799565d4563a50ea0414e15d3a3,
title = "Identifying passivated dynamic force microscopy tips on H:Si(100)",
abstract = "The chemical reactivity of the tip plays a central role in image formation in dynamic force microscopy, but in very many cases the state of the probe is a key experimental unknown. We show here that an H-terminated and thus chemically unreactive tip can be readily identified via characteristic imaging and spectroscopic (F(z)) signatures, including, in particular, contrast inversion, on hydrogen-passivated Si(100). We determine the tip apex termination by comparing site-specific difference force curves with the results of density functional theory, providing a clear protocol for the identification of chemically unreactive tips on silicon surfaces. ",
keywords = "Hydrogen,atomic-scale,molecule,silicon surfaces,single",
author = "Peter Sharp and Samuel Jarvis and Richard Woolley and Adam Sweetman and Lev Kantorovich and Chris Pakes and Philip Moriarty",
year = "2012",
month = jun,
day = "4",
doi = "10.1063/1.4726086",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Identifying passivated dynamic force microscopy tips on H:Si(100)

AU - Sharp, Peter

AU - Jarvis, Samuel

AU - Woolley, Richard

AU - Sweetman, Adam

AU - Kantorovich, Lev

AU - Pakes, Chris

AU - Moriarty, Philip

PY - 2012/6/4

Y1 - 2012/6/4

N2 - The chemical reactivity of the tip plays a central role in image formation in dynamic force microscopy, but in very many cases the state of the probe is a key experimental unknown. We show here that an H-terminated and thus chemically unreactive tip can be readily identified via characteristic imaging and spectroscopic (F(z)) signatures, including, in particular, contrast inversion, on hydrogen-passivated Si(100). We determine the tip apex termination by comparing site-specific difference force curves with the results of density functional theory, providing a clear protocol for the identification of chemically unreactive tips on silicon surfaces.

AB - The chemical reactivity of the tip plays a central role in image formation in dynamic force microscopy, but in very many cases the state of the probe is a key experimental unknown. We show here that an H-terminated and thus chemically unreactive tip can be readily identified via characteristic imaging and spectroscopic (F(z)) signatures, including, in particular, contrast inversion, on hydrogen-passivated Si(100). We determine the tip apex termination by comparing site-specific difference force curves with the results of density functional theory, providing a clear protocol for the identification of chemically unreactive tips on silicon surfaces.

KW - Hydrogen,atomic-scale,molecule,silicon surfaces,single

U2 - 10.1063/1.4726086

DO - 10.1063/1.4726086

M3 - Journal article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233120

ER -