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Implementation of Single-Electron Transistor with Resistive Gate

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<mark>Journal publication date</mark>1999
<mark>Journal</mark>Japanese Journal of Applied Physics
Issue number1 B
Volume38
Number of pages4
Pages (from-to)406-409
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall AI/AIOx/AI tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.