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Implementation of Single-Electron Transistor with Resistive Gate

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Implementation of Single-Electron Transistor with Resistive Gate. / Pashkin, Yuri; Nakamura, Yasunobu; Tsai, Jaw Shen.
In: Japanese Journal of Applied Physics, Vol. 38, No. 1S, 1999, p. 406-409.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, Y, Nakamura, Y & Tsai, JS 1999, 'Implementation of Single-Electron Transistor with Resistive Gate', Japanese Journal of Applied Physics, vol. 38, no. 1S, pp. 406-409. https://doi.org/10.1143/JJAP.38.406

APA

Pashkin, Y., Nakamura, Y., & Tsai, J. S. (1999). Implementation of Single-Electron Transistor with Resistive Gate. Japanese Journal of Applied Physics, 38(1S), 406-409. https://doi.org/10.1143/JJAP.38.406

Vancouver

Pashkin Y, Nakamura Y, Tsai JS. Implementation of Single-Electron Transistor with Resistive Gate. Japanese Journal of Applied Physics. 1999;38(1S):406-409. doi: 10.1143/JJAP.38.406

Author

Pashkin, Yuri ; Nakamura, Yasunobu ; Tsai, Jaw Shen. / Implementation of Single-Electron Transistor with Resistive Gate. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38, No. 1S. pp. 406-409.

Bibtex

@article{8ec68b0ae2dd4ea88cbb18419a05c256,
title = "Implementation of Single-Electron Transistor with Resistive Gate",
abstract = "We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall AI/AIOx/AI tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.",
keywords = "C-SET, Coulomb blockade, R-SET, Single electron transistor, Single electron tunneling",
author = "Yuri Pashkin and Yasunobu Nakamura and Tsai, {Jaw Shen}",
year = "1999",
doi = "10.1143/JJAP.38.406",
language = "English",
volume = "38",
pages = "406--409",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Institute of Physics Publishing",
number = "1S",

}

RIS

TY - JOUR

T1 - Implementation of Single-Electron Transistor with Resistive Gate

AU - Pashkin, Yuri

AU - Nakamura, Yasunobu

AU - Tsai, Jaw Shen

PY - 1999

Y1 - 1999

N2 - We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall AI/AIOx/AI tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.

AB - We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall AI/AIOx/AI tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.

KW - C-SET

KW - Coulomb blockade

KW - R-SET

KW - Single electron transistor

KW - Single electron tunneling

U2 - 10.1143/JJAP.38.406

DO - 10.1143/JJAP.38.406

M3 - Journal article

VL - 38

SP - 406

EP - 409

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1S

ER -