Final published version
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Large-area periodically-poled lithium niobate wafer stacks optimized for high-energy narrowband terahertz generation
AU - Mosley, Connor D. W.
AU - Lake, Daniel S.
AU - Graham, Darren M.
AU - Jamison, Steven P.
AU - Appleby, Robert B.
AU - Burt, Graeme
AU - Hibberd, Morgan T.
PY - 2023/1/30
Y1 - 2023/1/30
N2 - Periodically-poled lithium niobate (PPLN) sources consisting of custom-built stacks of large-area wafers provide a unique opportunity to systematically study the multi-cycle terahertz (THz) generation mechanism as they are assembled layer-by-layer. Here we investigate and optimize the THz emission from PPLN wafer stacks as a function of wafer number, pump fluence, pulse duration and chirp, wafer separation, and pump focusing. Using 135 µm-thick, 2"-diameter wafers we generate high-energy, narrowband THz pulses with central frequencies up to 0.39 THz, directly suitable for THz-driven particle acceleration applications. We explore the multi-cycle pulse build-up with increasing wafer numbers using electro-optic sampling measurements, achieving THz conversion efficiencies up to 0.17%, while demonstrating unique control over the pulse length and bandwidth these sources offer. Guided by simulations, observed frequency-dependence on both stack-mounting and pump focusing conditions have been attributed to inter-wafer etalon and Gouy phase-shifts respectively, revealing subtle features that are critical to the understanding and performance of PPLN wafer-stack sources for optimal narrowband THz generation.
AB - Periodically-poled lithium niobate (PPLN) sources consisting of custom-built stacks of large-area wafers provide a unique opportunity to systematically study the multi-cycle terahertz (THz) generation mechanism as they are assembled layer-by-layer. Here we investigate and optimize the THz emission from PPLN wafer stacks as a function of wafer number, pump fluence, pulse duration and chirp, wafer separation, and pump focusing. Using 135 µm-thick, 2"-diameter wafers we generate high-energy, narrowband THz pulses with central frequencies up to 0.39 THz, directly suitable for THz-driven particle acceleration applications. We explore the multi-cycle pulse build-up with increasing wafer numbers using electro-optic sampling measurements, achieving THz conversion efficiencies up to 0.17%, while demonstrating unique control over the pulse length and bandwidth these sources offer. Guided by simulations, observed frequency-dependence on both stack-mounting and pump focusing conditions have been attributed to inter-wafer etalon and Gouy phase-shifts respectively, revealing subtle features that are critical to the understanding and performance of PPLN wafer-stack sources for optimal narrowband THz generation.
KW - Atomic and Molecular Physics, and Optics
U2 - 10.1364/OE.475604
DO - 10.1364/OE.475604
M3 - Journal article
VL - 31
SP - 4041
EP - 4054
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 3
ER -