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Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

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Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. / Kozlova, N. V.; Mori, N.; Makarovsky, O. et al.
In: Nature Communications, Vol. 3, 1097, 02.10.2012.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kozlova, NV, Mori, N, Makarovsky, O, Eaves, L, Zhuang, Q, Krier, A & Patane, A 2012, 'Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor', Nature Communications, vol. 3, 1097. https://doi.org/10.1038/ncomms2106

APA

Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A., & Patane, A. (2012). Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. Nature Communications, 3, Article 1097. https://doi.org/10.1038/ncomms2106

Vancouver

Kozlova NV, Mori N, Makarovsky O, Eaves L, Zhuang Q, Krier A et al. Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. Nature Communications. 2012 Oct 2;3:1097. doi: 10.1038/ncomms2106

Author

Kozlova, N. V. ; Mori, N. ; Makarovsky, O. et al. / Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. In: Nature Communications. 2012 ; Vol. 3.

Bibtex

@article{8ee0fcdf1fb1404281ef94b8cbc87c4a,
title = "Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor",
abstract = "Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.",
keywords = "Physical sciences, Applied physics , Condensed matter , Materials science",
author = "Kozlova, {N. V.} and N. Mori and O. Makarovsky and L. Eaves and Qiandong Zhuang and Anthony Krier and A. Patane",
year = "2012",
month = oct,
day = "2",
doi = "10.1038/ncomms2106",
language = "English",
volume = "3",
journal = "Nature Communications",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

AU - Kozlova, N. V.

AU - Mori, N.

AU - Makarovsky, O.

AU - Eaves, L.

AU - Zhuang, Qiandong

AU - Krier, Anthony

AU - Patane, A.

PY - 2012/10/2

Y1 - 2012/10/2

N2 - Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.

AB - Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.

KW - Physical sciences

KW - Applied physics

KW - Condensed matter

KW - Materials science

UR - http://www.scopus.com/inward/record.url?scp=84869447790&partnerID=8YFLogxK

U2 - 10.1038/ncomms2106

DO - 10.1038/ncomms2106

M3 - Journal article

AN - SCOPUS:84869447790

VL - 3

JO - Nature Communications

JF - Nature Communications

M1 - 1097

ER -