Home > Research > Publications & Outputs > Low-angle misorientation dependence of the opti...
View graph of relations

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Robert J. Young
  • Lorenzo O. Mereni
  • Nikolay Petkov
  • Gabrielle R. Knight
  • Valeria Dimastrodonato
  • Paul K. Hurley
  • Greg Hughes
  • Emanuele Pelucchi
<mark>Journal publication date</mark>15/04/2010
<mark>Journal</mark>Journal of Crystal Growth
Issue number9
Number of pages5
Pages (from-to)1546-1550
Publication StatusPublished
<mark>Original language</mark>English


We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).