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Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. / Young, Robert J.; Mereni, Lorenzo O.; Petkov, Nikolay et al.
In: Journal of Crystal Growth, Vol. 312, No. 9, 15.04.2010, p. 1546-1550.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Young, RJ, Mereni, LO, Petkov, N, Knight, GR, Dimastrodonato, V, Hurley, PK, Hughes, G & Pelucchi, E 2010, 'Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells', Journal of Crystal Growth, vol. 312, no. 9, pp. 1546-1550. https://doi.org/10.1016/j.jcrysgro.2010.01.033

APA

Young, R. J., Mereni, L. O., Petkov, N., Knight, G. R., Dimastrodonato, V., Hurley, P. K., Hughes, G., & Pelucchi, E. (2010). Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. Journal of Crystal Growth, 312(9), 1546-1550. https://doi.org/10.1016/j.jcrysgro.2010.01.033

Vancouver

Young RJ, Mereni LO, Petkov N, Knight GR, Dimastrodonato V, Hurley PK et al. Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. Journal of Crystal Growth. 2010 Apr 15;312(9):1546-1550. doi: 10.1016/j.jcrysgro.2010.01.033

Author

Young, Robert J. ; Mereni, Lorenzo O. ; Petkov, Nikolay et al. / Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 9. pp. 1546-1550.

Bibtex

@article{c99d4713cd6541738404df63172a8163,
title = "Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells",
abstract = "We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).",
author = "Young, {Robert J.} and Mereni, {Lorenzo O.} and Nikolay Petkov and Knight, {Gabrielle R.} and Valeria Dimastrodonato and Hurley, {Paul K.} and Greg Hughes and Emanuele Pelucchi",
year = "2010",
month = apr,
day = "15",
doi = "10.1016/j.jcrysgro.2010.01.033",
language = "English",
volume = "312",
pages = "1546--1550",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "9",

}

RIS

TY - JOUR

T1 - Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

AU - Young, Robert J.

AU - Mereni, Lorenzo O.

AU - Petkov, Nikolay

AU - Knight, Gabrielle R.

AU - Dimastrodonato, Valeria

AU - Hurley, Paul K.

AU - Hughes, Greg

AU - Pelucchi, Emanuele

PY - 2010/4/15

Y1 - 2010/4/15

N2 - We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).

AB - We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).

U2 - 10.1016/j.jcrysgro.2010.01.033

DO - 10.1016/j.jcrysgro.2010.01.033

M3 - Journal article

VL - 312

SP - 1546

EP - 1550

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 9

ER -