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Low-frequency charge noise in suspended aluminum single-electron transistors

Research output: Contribution to journalJournal articlepeer-review

Article number033107
<mark>Journal publication date</mark>16/07/2007
<mark>Journal</mark>Applied Physics Letters
Issue number3
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English


The authors have developed a fabrication method for suspended metallic single-electron transistors
SETs utilizing a combination of conventional angle evaporation technique and ashing of the
underlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulomb
blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather
low but still within the range reported for conventional Al devices. We suggest that the noise level
can be further reduced by decreasing the effective SET temperature.