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Low-frequency charge noise in suspended aluminum single-electron transistors

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Article number033107
<mark>Journal publication date</mark>16/07/2007
<mark>Journal</mark>Applied Physics Letters
Issue number3
Volume91
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The authors have developed a fabrication method for suspended metallic single-electron transistors
SETs utilizing a combination of conventional angle evaporation technique and ashing of the
underlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulomb
blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather
low but still within the range reported for conventional Al devices. We suggest that the noise level
can be further reduced by decreasing the effective SET temperature.