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Low-frequency charge noise in suspended aluminum single-electron transistors

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low-frequency charge noise in suspended aluminum single-electron transistors. / Li, T. F.; Pashkin, Yuri; Astafiev, Oleg V. et al.
In: Applied Physics Letters, Vol. 91, No. 3, 033107, 16.07.2007.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Li, TF, Pashkin, Y, Astafiev, OV, Nakamura, Y, Tsai, J-S & Im, H 2007, 'Low-frequency charge noise in suspended aluminum single-electron transistors', Applied Physics Letters, vol. 91, no. 3, 033107. https://doi.org/10.1063/1.2759260

APA

Li, T. F., Pashkin, Y., Astafiev, O. V., Nakamura, Y., Tsai, J.-S., & Im, H. (2007). Low-frequency charge noise in suspended aluminum single-electron transistors. Applied Physics Letters, 91(3), Article 033107. https://doi.org/10.1063/1.2759260

Vancouver

Li TF, Pashkin Y, Astafiev OV, Nakamura Y, Tsai JS, Im H. Low-frequency charge noise in suspended aluminum single-electron transistors. Applied Physics Letters. 2007 Jul 16;91(3):033107. doi: 10.1063/1.2759260

Author

Li, T. F. ; Pashkin, Yuri ; Astafiev, Oleg V. et al. / Low-frequency charge noise in suspended aluminum single-electron transistors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 3.

Bibtex

@article{867f34acd5124ed5ae65d4e391b5d804,
title = "Low-frequency charge noise in suspended aluminum single-electron transistors",
abstract = "The authors have developed a fabrication method for suspended metallic single-electron transistorsSETs utilizing a combination of conventional angle evaporation technique and ashing of theunderlying organic polymer. The authors{\textquoteright} Al-based suspended devices exhibit clear Coulombblockade effects typical for conventional SETs. The measured low-frequency charge noise is ratherlow but still within the range reported for conventional Al devices. We suggest that the noise levelcan be further reduced by decreasing the effective SET temperature. ",
author = "Li, {T. F.} and Yuri Pashkin and Astafiev, {Oleg V.} and Y. Nakamura and Jaw-Shen Tsai and Hyunsik Im",
year = "2007",
month = jul,
day = "16",
doi = "10.1063/1.2759260",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Low-frequency charge noise in suspended aluminum single-electron transistors

AU - Li, T. F.

AU - Pashkin, Yuri

AU - Astafiev, Oleg V.

AU - Nakamura, Y.

AU - Tsai, Jaw-Shen

AU - Im, Hyunsik

PY - 2007/7/16

Y1 - 2007/7/16

N2 - The authors have developed a fabrication method for suspended metallic single-electron transistorsSETs utilizing a combination of conventional angle evaporation technique and ashing of theunderlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulombblockade effects typical for conventional SETs. The measured low-frequency charge noise is ratherlow but still within the range reported for conventional Al devices. We suggest that the noise levelcan be further reduced by decreasing the effective SET temperature.

AB - The authors have developed a fabrication method for suspended metallic single-electron transistorsSETs utilizing a combination of conventional angle evaporation technique and ashing of theunderlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulombblockade effects typical for conventional SETs. The measured low-frequency charge noise is ratherlow but still within the range reported for conventional Al devices. We suggest that the noise levelcan be further reduced by decreasing the effective SET temperature.

U2 - 10.1063/1.2759260

DO - 10.1063/1.2759260

M3 - Journal article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033107

ER -