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Mechanochemistry at silicon surfaces

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Mechanochemistry at silicon surfaces. / Sweetman, Adam; Jarvis, Samuel Paul; Moriarty, Philip.
Noncontact Atomic Force Microscopy. ed. / Seizo Morita; Franz J. Giessibl; Ernst Meyer; Roland Wiesendanger. Springer Verlag, 2015. p. 247-274 (NanoScience and Technology).

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review

Harvard

Sweetman, A, Jarvis, SP & Moriarty, P 2015, Mechanochemistry at silicon surfaces. in S Morita, FJ Giessibl, E Meyer & R Wiesendanger (eds), Noncontact Atomic Force Microscopy. NanoScience and Technology, Springer Verlag, pp. 247-274. https://doi.org/10.1007/978-3-319-15588-3_13

APA

Sweetman, A., Jarvis, S. P., & Moriarty, P. (2015). Mechanochemistry at silicon surfaces. In S. Morita, F. J. Giessibl, E. Meyer, & R. Wiesendanger (Eds.), Noncontact Atomic Force Microscopy (pp. 247-274). (NanoScience and Technology). Springer Verlag. https://doi.org/10.1007/978-3-319-15588-3_13

Vancouver

Sweetman A, Jarvis SP, Moriarty P. Mechanochemistry at silicon surfaces. In Morita S, Giessibl FJ, Meyer E, Wiesendanger R, editors, Noncontact Atomic Force Microscopy. Springer Verlag. 2015. p. 247-274. (NanoScience and Technology). doi: 10.1007/978-3-319-15588-3_13

Author

Sweetman, Adam ; Jarvis, Samuel Paul ; Moriarty, Philip. / Mechanochemistry at silicon surfaces. Noncontact Atomic Force Microscopy. editor / Seizo Morita ; Franz J. Giessibl ; Ernst Meyer ; Roland Wiesendanger. Springer Verlag, 2015. pp. 247-274 (NanoScience and Technology).

Bibtex

@inbook{d0119e6dd4d1422386223c5f9991d60d,
title = "Mechanochemistry at silicon surfaces",
abstract = "Non-contact atomic force microscopy has driven the development of a variety of exciting chemomechanical protocols for manipulating metal, semiconductor, and insulating surfaces at the single chemical bond limit. In this chapter we discuss atomic manipulation on silicon surfaces via mechanical force alone (mechanochemistry), with a particular focus on a prototype of a mechanicallyactuated atomic switch: the flipping of bi-stable dimers on the Si(100)–c(4 × 2) surface. The importance of the mutual orientation of electronic orbitals in the dimer manipulation process is explored in the broader context of the mechanochemical modification of covalently bonded semiconductors. In addition, variations in surface reactivity play a key role in the ability to generate (and image) atomic-scale modifications and we discuss experimental and theoretical work on H:Si(100) as an exemplar of a passivated and chemically inert substrate, as compared to the relatively high reactivity of the unpassivated Si(100) surface.",
author = "Adam Sweetman and Jarvis, {Samuel Paul} and Philip Moriarty",
year = "2015",
month = may,
day = "19",
doi = "10.1007/978-3-319-15588-3_13",
language = "English",
isbn = "9783319358765",
series = "NanoScience and Technology",
publisher = "Springer Verlag",
pages = "247--274",
editor = "Seizo Morita and Giessibl, {Franz J.} and Ernst Meyer and Roland Wiesendanger",
booktitle = "Noncontact Atomic Force Microscopy",

}

RIS

TY - CHAP

T1 - Mechanochemistry at silicon surfaces

AU - Sweetman, Adam

AU - Jarvis, Samuel Paul

AU - Moriarty, Philip

PY - 2015/5/19

Y1 - 2015/5/19

N2 - Non-contact atomic force microscopy has driven the development of a variety of exciting chemomechanical protocols for manipulating metal, semiconductor, and insulating surfaces at the single chemical bond limit. In this chapter we discuss atomic manipulation on silicon surfaces via mechanical force alone (mechanochemistry), with a particular focus on a prototype of a mechanicallyactuated atomic switch: the flipping of bi-stable dimers on the Si(100)–c(4 × 2) surface. The importance of the mutual orientation of electronic orbitals in the dimer manipulation process is explored in the broader context of the mechanochemical modification of covalently bonded semiconductors. In addition, variations in surface reactivity play a key role in the ability to generate (and image) atomic-scale modifications and we discuss experimental and theoretical work on H:Si(100) as an exemplar of a passivated and chemically inert substrate, as compared to the relatively high reactivity of the unpassivated Si(100) surface.

AB - Non-contact atomic force microscopy has driven the development of a variety of exciting chemomechanical protocols for manipulating metal, semiconductor, and insulating surfaces at the single chemical bond limit. In this chapter we discuss atomic manipulation on silicon surfaces via mechanical force alone (mechanochemistry), with a particular focus on a prototype of a mechanicallyactuated atomic switch: the flipping of bi-stable dimers on the Si(100)–c(4 × 2) surface. The importance of the mutual orientation of electronic orbitals in the dimer manipulation process is explored in the broader context of the mechanochemical modification of covalently bonded semiconductors. In addition, variations in surface reactivity play a key role in the ability to generate (and image) atomic-scale modifications and we discuss experimental and theoretical work on H:Si(100) as an exemplar of a passivated and chemically inert substrate, as compared to the relatively high reactivity of the unpassivated Si(100) surface.

U2 - 10.1007/978-3-319-15588-3_13

DO - 10.1007/978-3-319-15588-3_13

M3 - Chapter (peer-reviewed)

AN - SCOPUS:84929621951

SN - 9783319358765

SN - 9783319155876

T3 - NanoScience and Technology

SP - 247

EP - 274

BT - Noncontact Atomic Force Microscopy

A2 - Morita, Seizo

A2 - Giessibl, Franz J.

A2 - Meyer, Ernst

A2 - Wiesendanger, Roland

PB - Springer Verlag

ER -