We have fabricated and measured transport properties of resistively coupled single-electron
transistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and was
connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunnel
junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb
blockade pattern was observed. Our simulations based on the orthodox theory of single-electron
tunneling are in good qualitative agreement with the experimental data and indicate excessive
electron temperature of the devices.