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Metallic resistively coupled single-electron transistor

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<mark>Journal publication date</mark>1999
<mark>Journal</mark>Applied Physics Letters
Issue number1
Volume74
Number of pages3
Pages (from-to)132-134
Publication StatusPublished
Early online date24/12/98
<mark>Original language</mark>English

Abstract

We have fabricated and measured transport properties of resistively coupled single-electron
transistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and was
connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunnel
junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb
blockade pattern was observed. Our simulations based on the orthodox theory of single-electron
tunneling are in good qualitative agreement with the experimental data and indicate excessive
electron temperature of the devices.