Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Metallic resistively coupled single-electron transistor
AU - Pashkin, Yuri
AU - Nakamura, Y.
AU - Tsai, Jaw-Shen
PY - 1999
Y1 - 1999
N2 - We have fabricated and measured transport properties of resistively coupled single-electrontransistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and wasconnected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunneljunctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulombblockade pattern was observed. Our simulations based on the orthodox theory of single-electrontunneling are in good qualitative agreement with the experimental data and indicate excessiveelectron temperature of the devices.
AB - We have fabricated and measured transport properties of resistively coupled single-electrontransistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and wasconnected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunneljunctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulombblockade pattern was observed. Our simulations based on the orthodox theory of single-electrontunneling are in good qualitative agreement with the experimental data and indicate excessiveelectron temperature of the devices.
U2 - 10.1063/1.122973
DO - 10.1063/1.122973
M3 - Journal article
VL - 74
SP - 132
EP - 134
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -