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Metallic resistively coupled single-electron transistor

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Metallic resistively coupled single-electron transistor. / Pashkin, Yuri; Nakamura, Y.; Tsai, Jaw-Shen.
In: Applied Physics Letters, Vol. 74, No. 1, 1999, p. 132-134.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, Y, Nakamura, Y & Tsai, J-S 1999, 'Metallic resistively coupled single-electron transistor', Applied Physics Letters, vol. 74, no. 1, pp. 132-134. https://doi.org/10.1063/1.122973

APA

Pashkin, Y., Nakamura, Y., & Tsai, J-S. (1999). Metallic resistively coupled single-electron transistor. Applied Physics Letters, 74(1), 132-134. https://doi.org/10.1063/1.122973

Vancouver

Pashkin Y, Nakamura Y, Tsai J-S. Metallic resistively coupled single-electron transistor. Applied Physics Letters. 1999;74(1):132-134. Epub 1998 Dec 24. doi: 10.1063/1.122973

Author

Pashkin, Yuri ; Nakamura, Y. ; Tsai, Jaw-Shen. / Metallic resistively coupled single-electron transistor. In: Applied Physics Letters. 1999 ; Vol. 74, No. 1. pp. 132-134.

Bibtex

@article{2dfba570ab86440a90e4b151bef0c5ab,
title = "Metallic resistively coupled single-electron transistor",
abstract = "We have fabricated and measured transport properties of resistively coupled single-electrontransistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and wasconnected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunneljunctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulombblockade pattern was observed. Our simulations based on the orthodox theory of single-electrontunneling are in good qualitative agreement with the experimental data and indicate excessiveelectron temperature of the devices.",
author = "Yuri Pashkin and Y. Nakamura and Jaw-Shen Tsai",
year = "1999",
doi = "10.1063/1.122973",
language = "English",
volume = "74",
pages = "132--134",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Metallic resistively coupled single-electron transistor

AU - Pashkin, Yuri

AU - Nakamura, Y.

AU - Tsai, Jaw-Shen

PY - 1999

Y1 - 1999

N2 - We have fabricated and measured transport properties of resistively coupled single-electrontransistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and wasconnected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunneljunctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulombblockade pattern was observed. Our simulations based on the orthodox theory of single-electrontunneling are in good qualitative agreement with the experimental data and indicate excessiveelectron temperature of the devices.

AB - We have fabricated and measured transport properties of resistively coupled single-electrontransistors ~R-SETs!. In our version, a chromium thin-film resistive strip served as a gate and wasconnected directly to a mesoscopic island formed between two ultrasmall Al/AlOx /Al tunneljunctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulombblockade pattern was observed. Our simulations based on the orthodox theory of single-electrontunneling are in good qualitative agreement with the experimental data and indicate excessiveelectron temperature of the devices.

U2 - 10.1063/1.122973

DO - 10.1063/1.122973

M3 - Journal article

VL - 74

SP - 132

EP - 134

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -