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Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

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Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb. / Craig, Adam; Marshall, Andrew; Tian, Z.-B. et al.
In: Infrared Physics and Technology, Vol. 67, 11.2014, p. 210-213.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Craig, A, Marshall, A, Tian, Z-B & Krishna, S 2014, 'Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb', Infrared Physics and Technology, vol. 67, pp. 210-213. https://doi.org/10.1016/j.infrared.2014.07.033

APA

Craig, A., Marshall, A., Tian, Z-B., & Krishna, S. (2014). Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb. Infrared Physics and Technology, 67, 210-213. https://doi.org/10.1016/j.infrared.2014.07.033

Vancouver

Craig A, Marshall A, Tian Z-B, Krishna S. Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb. Infrared Physics and Technology. 2014 Nov;67:210-213. Epub 2014 Aug 7. doi: 10.1016/j.infrared.2014.07.033

Author

Craig, Adam ; Marshall, Andrew ; Tian, Z.-B. et al. / Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb. In: Infrared Physics and Technology. 2014 ; Vol. 67. pp. 210-213.

Bibtex

@article{baa395acab124b249e4156c5aba46a3e,
title = "Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb",
abstract = "InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.",
keywords = "nBn photodetector, Interface misfit epitaxy, Dark currents",
author = "Adam Craig and Andrew Marshall and Z.-B. Tian and S. Krishna",
year = "2014",
month = nov,
doi = "10.1016/j.infrared.2014.07.033",
language = "English",
volume = "67",
pages = "210--213",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

AU - Craig, Adam

AU - Marshall, Andrew

AU - Tian, Z.-B.

AU - Krishna, S.

PY - 2014/11

Y1 - 2014/11

N2 - InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

AB - InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

KW - nBn photodetector

KW - Interface misfit epitaxy

KW - Dark currents

U2 - 10.1016/j.infrared.2014.07.033

DO - 10.1016/j.infrared.2014.07.033

M3 - Journal article

VL - 67

SP - 210

EP - 213

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

ER -