Home > Research > Publications & Outputs > Mid-wavelength infrared resonant cavity enhance...

Associated organisational unit

View graph of relations

Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals. / Savich, G.R.; Wicks, G.W.; Jamison, K. et al.
In: Proceedings of SPIE, Vol. 11002, 2019.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

APA

Vancouver

Savich GR, Wicks GW, Jamison K, Fredin L, Golding TD, Carmichael M et al. Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals. Proceedings of SPIE. 2019;11002. doi: 10.1117/12.2523357

Author

Bibtex

@article{cd3f77c61c3f46e18e0e59eb429ffb50,
title = "Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals",
abstract = "Inserting an infrared detector architecture into an optical cavity between two high-reflectivity mirrors allows incident light to reflect and pass through the detector multiple times, thereby enhancing absorption within the active region. This allows for a 40-100x thinner optical absorbing region compared to conventional infrared detector structures which reduces the detector dark current and noise and enhances SNR. We report the design, growth, fabrication and characterization of resonant cavity enhanced MWIR photodiodes on GaSb substrates. Devices on GaSb use AlAsSb/GaSb mirrors, AlAsSb spacer layers, and a narrow 96 nm InAsSb absorber. Dark current and detectivity behavior better than equivalent broadband nBn detectors in the literature have been observed. 34nm linewidth detector response is observed. Resonant cavity-enhanced photodiodes with resonant wavelengths of 3.6μm and 3.72μm are demonstrated with dark currents equal to or lower than Rule 07 over the operating temperature range of the device. D∗ in excess of 1×10 10 cm Hz 1/2W -1 at 300K and 8×10 10 cm Hz 1/2W -1 at 250K have been achieved. Amethyst Research has produced packaged resonant-cavity detectors. The 3.6 μm resonant-cavity enhanced photodiode was packaged within an Amethyst Research designed pre-amplifier package with an integrated TEC for detector cooling. ",
author = "G.R. Savich and G.W. Wicks and K. Jamison and L. Fredin and T.D. Golding and M. Carmichael and J. Reilly and A.P. Craig and F. Al-Saymari and A.R. Marshall",
year = "2019",
doi = "10.1117/12.2523357",
language = "English",
volume = "11002",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals

AU - Savich, G.R.

AU - Wicks, G.W.

AU - Jamison, K.

AU - Fredin, L.

AU - Golding, T.D.

AU - Carmichael, M.

AU - Reilly, J.

AU - Craig, A.P.

AU - Al-Saymari, F.

AU - Marshall, A.R.

PY - 2019

Y1 - 2019

N2 - Inserting an infrared detector architecture into an optical cavity between two high-reflectivity mirrors allows incident light to reflect and pass through the detector multiple times, thereby enhancing absorption within the active region. This allows for a 40-100x thinner optical absorbing region compared to conventional infrared detector structures which reduces the detector dark current and noise and enhances SNR. We report the design, growth, fabrication and characterization of resonant cavity enhanced MWIR photodiodes on GaSb substrates. Devices on GaSb use AlAsSb/GaSb mirrors, AlAsSb spacer layers, and a narrow 96 nm InAsSb absorber. Dark current and detectivity behavior better than equivalent broadband nBn detectors in the literature have been observed. 34nm linewidth detector response is observed. Resonant cavity-enhanced photodiodes with resonant wavelengths of 3.6μm and 3.72μm are demonstrated with dark currents equal to or lower than Rule 07 over the operating temperature range of the device. D∗ in excess of 1×10 10 cm Hz 1/2W -1 at 300K and 8×10 10 cm Hz 1/2W -1 at 250K have been achieved. Amethyst Research has produced packaged resonant-cavity detectors. The 3.6 μm resonant-cavity enhanced photodiode was packaged within an Amethyst Research designed pre-amplifier package with an integrated TEC for detector cooling.

AB - Inserting an infrared detector architecture into an optical cavity between two high-reflectivity mirrors allows incident light to reflect and pass through the detector multiple times, thereby enhancing absorption within the active region. This allows for a 40-100x thinner optical absorbing region compared to conventional infrared detector structures which reduces the detector dark current and noise and enhances SNR. We report the design, growth, fabrication and characterization of resonant cavity enhanced MWIR photodiodes on GaSb substrates. Devices on GaSb use AlAsSb/GaSb mirrors, AlAsSb spacer layers, and a narrow 96 nm InAsSb absorber. Dark current and detectivity behavior better than equivalent broadband nBn detectors in the literature have been observed. 34nm linewidth detector response is observed. Resonant cavity-enhanced photodiodes with resonant wavelengths of 3.6μm and 3.72μm are demonstrated with dark currents equal to or lower than Rule 07 over the operating temperature range of the device. D∗ in excess of 1×10 10 cm Hz 1/2W -1 at 300K and 8×10 10 cm Hz 1/2W -1 at 250K have been achieved. Amethyst Research has produced packaged resonant-cavity detectors. The 3.6 μm resonant-cavity enhanced photodiode was packaged within an Amethyst Research designed pre-amplifier package with an integrated TEC for detector cooling.

U2 - 10.1117/12.2523357

DO - 10.1117/12.2523357

M3 - Journal article

VL - 11002

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

ER -