Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

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Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz
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https://doi.org/10.3788/COL202422.012502
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Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber. / Cao, P.; Wang, T.; Peng, H. et al.
In: Chinese Optics Letters, Vol. 22, No. 1, 012502, 10.01.2024.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Bibtex

@article{b5e198533af0458aad7c221c3101cfc1,

title = "Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber",

abstract = "In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 × 10-6 A=cm2 and 0.31 A=cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 104 Ω cm2 and 1.32Ω cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 109 cm Hz1=2=W were obtained at a high operating temperature up to 237 K.",

keywords = "dark current, high operating temperature, InAs/InAsSb superlattice, mid-wavelength infrared photodetector, III-V semiconductors, Indium antimonides, Indium arsenide, Infrared radiation, Photodetectors, Photons, Silica, Temperature, Dark current densities, High operating temperature, Ina/inassb superlattice, Infrared detection, Infrared photodetector, Mid-wavelength infrared, Mid-wavelength infrared photodetector, Operating temperature, Resistance-area products, Type II, Dark currents",

author = "P. Cao and T. Wang and H. Peng and Z. Li and Q. Zhuang and W. Zheng",

year = "2024",

month = jan,

day = "10",

doi = "10.3788/COL202422.012502",

language = "English",

volume = "22",

journal = "Chinese Optics Letters",

number = "1",

}

RIS

TY - JOUR

T1 - Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

AU - Cao, P.

AU - Wang, T.

AU - Peng, H.

AU - Li, Z.

AU - Zhuang, Q.

AU - Zheng, W.

PY - 2024/1/10

Y1 - 2024/1/10

N2 - In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 × 10-6 A=cm2 and 0.31 A=cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 104 Ω cm2 and 1.32Ω cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 109 cm Hz1=2=W were obtained at a high operating temperature up to 237 K.

AB - In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 × 10-6 A=cm2 and 0.31 A=cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 104 Ω cm2 and 1.32Ω cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 109 cm Hz1=2=W were obtained at a high operating temperature up to 237 K.

KW - dark current

KW - high operating temperature

KW - InAs/InAsSb superlattice

KW - mid-wavelength infrared photodetector

KW - III-V semiconductors

KW - Indium antimonides

KW - Indium arsenide

KW - Infrared radiation

KW - Photodetectors

KW - Photons

KW - Silica

KW - Temperature

KW - Dark current densities

KW - High operating temperature

KW - Ina/inassb superlattice

KW - Infrared detection

KW - Infrared photodetector

KW - Mid-wavelength infrared

KW - Mid-wavelength infrared photodetector

KW - Operating temperature

KW - Resistance-area products

KW - Type II

KW - Dark currents

U2 - 10.3788/COL202422.012502

DO - 10.3788/COL202422.012502

M3 - Journal article

VL - 22

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - 1

M1 - 012502

ER -

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