Home > Research > Publications & Outputs > Nanoscale elastic imaging of aluminum/low-k die...
View graph of relations

Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • G. S. Shekhawat
  • O. V. Kolosov
  • G. A.D. Briggs
  • E. O. Shaffer
  • S. Martin
  • R. E. Geer
<mark>Journal publication date</mark>1/01/2000
<mark>Journal</mark>Materials Research Society Symposium-Proceedings
Number of pages7
Pages (from-to)D171-D177
Publication StatusPublished
<mark>Original language</mark>English


A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascene integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.