Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures

Physics

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures. / Shekhawat, G. S.; Kolosov, O. V.; Briggs, G. A.D. et al.
In: Materials Research Society Symposium-Proceedings, Vol. 612, 01.01.2000, p. D171-D177.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Shekhawat, GS, Kolosov, OV, Briggs, GAD, Shaffer, EO, Martin, S & Geer, RE 2000, 'Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures', Materials Research Society Symposium-Proceedings, vol. 612, pp. D171-D177.

APA

Shekhawat, G. S., Kolosov, O. V., Briggs, G. A. D., Shaffer, E. O., Martin, S., & Geer, R. E. (2000). Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures. Materials Research Society Symposium-Proceedings, 612, D171-D177.

Vancouver

Shekhawat GS, Kolosov OV, Briggs GAD, Shaffer EO, Martin S, Geer RE. Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures. Materials Research Society Symposium-Proceedings. 2000 Jan 1;612:D171-D177.

Author

Shekhawat, G. S. ; Kolosov, O. V. ; Briggs, G. A.D. et al. / Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures. In: Materials Research Society Symposium-Proceedings. 2000 ; Vol. 612. pp. D171-D177.

Bibtex

@article{44a8ab8e7d6f4a4bac59d19cc02ba5c0,

title = "Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures",

abstract = "A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascene integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.",

author = "Shekhawat, {G. S.} and Kolosov, {O. V.} and Briggs, {G. A.D.} and Shaffer, {E. O.} and S. Martin and Geer, {R. E.}",

year = "2000",

month = jan,

day = "1",

language = "English",

volume = "612",

pages = "D171--D177",

journal = "Materials Research Society Symposium-Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

RIS

TY - JOUR

T1 - Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures

AU - Shekhawat, G. S.

AU - Kolosov, O. V.

AU - Briggs, G. A.D.

AU - Shaffer, E. O.

AU - Martin, S.

AU - Geer, R. E.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascene integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.

AB - A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascene integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.

M3 - Journal article

AN - SCOPUS:0034428410

VL - 612

SP - D171-D177

JO - Materials Research Society Symposium-Proceedings

JF - Materials Research Society Symposium-Proceedings

SN - 0272-9172

ER -

Research