Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO2/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 105 s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO2/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.