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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • S. A. Solin
  • D. R. Hines
  • A. C. H. Rowe
  • Jaw-Shen Tsai
  • Yuri Pashkin
  • S. J. Chung
  • N. Goel
  • M. Santos
<mark>Journal publication date</mark>27/05/2002
<mark>Journal</mark>Applied Physics Letters
Issue number21
Number of pages3
Pages (from-to)4012-4014
Publication StatusPublished
<mark>Original language</mark>English


A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported
extraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-doped
InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a
300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of
0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to
areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal
densities of order 1 Tb/in.2.