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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. / Solin, S. A.; Hines, D. R.; Rowe, A. C. H. et al.
In: Applied Physics Letters, Vol. 80, No. 21, 27.05.2002, p. 4012-4014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Solin, SA, Hines, DR, Rowe, ACH, Tsai, J-S, Pashkin, Y, Chung, SJ, Goel, N & Santos, M 2002, 'Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording', Applied Physics Letters, vol. 80, no. 21, pp. 4012-4014. https://doi.org/10.1063/1.1481238

APA

Solin, S. A., Hines, D. R., Rowe, A. C. H., Tsai, J-S., Pashkin, Y., Chung, S. J., Goel, N., & Santos, M. (2002). Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. Applied Physics Letters, 80(21), 4012-4014. https://doi.org/10.1063/1.1481238

Vancouver

Solin SA, Hines DR, Rowe ACH, Tsai J-S, Pashkin Y, Chung SJ et al. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. Applied Physics Letters. 2002 May 27;80(21):4012-4014. doi: 10.1063/1.1481238

Author

Solin, S. A. ; Hines, D. R. ; Rowe, A. C. H. et al. / Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording. In: Applied Physics Letters. 2002 ; Vol. 80, No. 21. pp. 4012-4014.

Bibtex

@article{d988e9f57d8140d8a1fdc4c6aad195c0,
title = "Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording",
abstract = "A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reportedextraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-dopedInSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors toareal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at arealdensities of order 1 Tb/in.2.",
author = "Solin, {S. A.} and Hines, {D. R.} and Rowe, {A. C. H.} and Jaw-Shen Tsai and Yuri Pashkin and Chung, {S. J.} and N. Goel and M. Santos",
year = "2002",
month = may,
day = "27",
doi = "10.1063/1.1481238",
language = "English",
volume = "80",
pages = "4012--4014",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "21",

}

RIS

TY - JOUR

T1 - Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

AU - Solin, S. A.

AU - Hines, D. R.

AU - Rowe, A. C. H.

AU - Tsai, Jaw-Shen

AU - Pashkin, Yuri

AU - Chung, S. J.

AU - Goel, N.

AU - Santos, M.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reportedextraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-dopedInSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors toareal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at arealdensities of order 1 Tb/in.2.

AB - A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reportedextraordinary magnetoresistance ~EMR! effect has been fabricated from a narrow-gap Si-dopedInSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a300 K EMR of 6% and a current sensitivity of 147 V/T at a relevant field of 0.05 T and a bias of0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors toareal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at arealdensities of order 1 Tb/in.2.

U2 - 10.1063/1.1481238

DO - 10.1063/1.1481238

M3 - Journal article

VL - 80

SP - 4012

EP - 4014

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -