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Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

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Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. / Hodgson, Peter David; Bentley, Matthew; Delli, Evangelia; Beanland, R; Wagener, Magnus C. ; Botha, Johannes Reinhardt ; Carrington, Peter James.

In: Semiconductor Science and Technology, Vol. 33, No. 12, 125021, 14.11.2018.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Hodgson, PD, Bentley, M, Delli, E, Beanland, R, Wagener, MC, Botha, JR & Carrington, PJ 2018, 'Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy', Semiconductor Science and Technology, vol. 33, no. 12, 125021. https://doi.org/10.1088/1361-6641/aae627

APA

Hodgson, P. D., Bentley, M., Delli, E., Beanland, R., Wagener, M. C., Botha, J. R., & Carrington, P. J. (2018). Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. Semiconductor Science and Technology, 33(12), [125021]. https://doi.org/10.1088/1361-6641/aae627

Vancouver

Hodgson PD, Bentley M, Delli E, Beanland R, Wagener MC, Botha JR et al. Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. Semiconductor Science and Technology. 2018 Nov 14;33(12). 125021. https://doi.org/10.1088/1361-6641/aae627

Author

Hodgson, Peter David ; Bentley, Matthew ; Delli, Evangelia ; Beanland, R ; Wagener, Magnus C. ; Botha, Johannes Reinhardt ; Carrington, Peter James. / Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 12.

Bibtex

@article{a26168a438964931ac2419b4c01a488e,
title = "Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy",
abstract = "We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs {\textquoteleft}cold capping{\textquoteright} technique was partly successful in preserving QD morphology during this process, but strong group V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small {\textquoteleft}core{\textquoteright} QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8x8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD.",
author = "Hodgson, {Peter David} and Matthew Bentley and Evangelia Delli and R Beanland and Wagener, {Magnus C.} and Botha, {Johannes Reinhardt} and Carrington, {Peter James}",
year = "2018",
month = nov,
day = "14",
doi = "10.1088/1361-6641/aae627",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "12",

}

RIS

TY - JOUR

T1 - Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

AU - Hodgson, Peter David

AU - Bentley, Matthew

AU - Delli, Evangelia

AU - Beanland, R

AU - Wagener, Magnus C.

AU - Botha, Johannes Reinhardt

AU - Carrington, Peter James

PY - 2018/11/14

Y1 - 2018/11/14

N2 - We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs ‘cold capping’ technique was partly successful in preserving QD morphology during this process, but strong group V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small ‘core’ QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8x8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD.

AB - We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs ‘cold capping’ technique was partly successful in preserving QD morphology during this process, but strong group V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small ‘core’ QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8x8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD.

U2 - 10.1088/1361-6641/aae627

DO - 10.1088/1361-6641/aae627

M3 - Journal article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

M1 - 125021

ER -