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Optical observation of single-carrier charging in type-II quantum ring ensembles

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number082104
<mark>Journal publication date</mark>20/02/2012
<mark>Journal</mark>Applied Physics Letters
Issue number8
Number of pages4
Pages (from-to)-
Publication StatusPublished
<mark>Original language</mark>English


A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]

Bibliographic note

© 2012 American Institute of Physics