Rights statement: © 2012 American Institute of Physics
Final published version, 1.22 MB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Optical observation of single-carrier charging in type-II quantum ring ensembles
AU - Young, Robert
AU - Smakman, E. P.
AU - Sanchez, A. M.
AU - Hodgson, P.
AU - Koenraad, P. M.
AU - Hayne, M.
N1 - © 2012 American Institute of Physics
PY - 2012/2/20
Y1 - 2012/2/20
N2 - A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]
AB - A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]
KW - HOLE SPIN
KW - DOTS
KW - SEMICONDUCTOR
KW - STATES
UR - http://www.scopus.com/inward/record.url?scp=84857756042&partnerID=8YFLogxK
U2 - 10.1063/1.3688037
DO - 10.1063/1.3688037
M3 - Journal article
VL - 100
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 082104
ER -