Home > Research > Publications & Outputs > Optoelectronic properties of atomically thin Re...

Associated organisational unit

Electronic data

  • Nanoscale_final_version

    Rights statement: © Royal Society of Chemistry 2016.

    Accepted author manuscript, 1.36 MB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

  • acceptance_email

    Other version, 4.71 KB, text/plain

    Available under license: None


Text available via DOI:

View graph of relations

Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Fucai Liu
  • Shoujun Zheng
  • Apoorva Chaturvedi
  • Viktor Zolyomi
  • Jiadong Zhou
  • Qundong Fu
  • Chao Zhu
  • Peng Yu
  • Qingsheng Zeng
  • Neil D. Drummond
  • Hong Jin Fan
  • Christian Kloc
  • Vladimir I. Fal'ko
  • Xuexia He
  • Zheng Liu
<mark>Journal publication date</mark>21/03/2016
Issue number11
Number of pages9
Pages (from-to)5826-5834
Publication StatusPublished
Early online date5/02/16
<mark>Original language</mark>English


Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm2 V-1 s-1 and an on/off ratio of 105, together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W-1. The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.

Bibliographic note

© Royal Society of Chemistry 2016.