Proof, 4.23 MB, PDF document
Available under license: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Licence: CC BY: Creative Commons Attribution 4.0 International License
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Out-of-plane dielectric susceptibility of graphene in twistronic and Bernal bilayers
AU - Slizovskiy, Sergey
AU - Garcia-Ruiz, Aitor
AU - Berdyugin, A. I.
AU - Na, X.
AU - Taniguchi, T.
AU - Watanabe, K.
AU - Geim, Andre
AU - Drummond, Neil
AU - Fal'ko, V. L.
PY - 2021/8/11
Y1 - 2021/8/11
N2 - We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene - both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functionaltheory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability αexp = 10.8 Å3 and effective out-of-plane dielectric susceptibility ϵz = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.
AB - We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene - both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functionaltheory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability αexp = 10.8 Å3 and effective out-of-plane dielectric susceptibility ϵz = 2.5, including their on-layer electron density distribution at zero magnetic field and the interlayer Landau level pinning at quantizing magnetic fields.
U2 - 10.1021/acs.nanolett.1c02211
DO - 10.1021/acs.nanolett.1c02211
M3 - Journal article
C2 - 34296602
VL - 21
SP - 6678
EP - 6683
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 15
ER -