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Oxides based resistive switching memories. / Kalem, Seref
; Tekin, Serdar B.; Kaya, Zahit E. et al.
Oxide-based Materials and Devices XII. ed. / David J. Rogers; David C. Look; Ferechteh H. Teherani. SPIE, 2021. 2585681 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Kalem, S
, Tekin, SB, Kaya, ZE, Jalaguier, E, Roelofs, R, Yildirim, S, Yavuzcetin, O & Wenger, C 2021,
Oxides based resistive switching memories. in DJ Rogers, DC Look & FH Teherani (eds),
Oxide-based Materials and Devices XII., 2585681, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11687, SPIE.
https://doi.org/10.1117/12.2585681APA
Kalem, S.
, Tekin, S. B., Kaya, Z. E., Jalaguier, E., Roelofs, R., Yildirim, S., Yavuzcetin, O., & Wenger, C. (2021).
Oxides based resistive switching memories. In D. J. Rogers, D. C. Look, & F. H. Teherani (Eds.),
Oxide-based Materials and Devices XII Article 2585681 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687). SPIE.
https://doi.org/10.1117/12.2585681Vancouver
Kalem S
, Tekin SB, Kaya ZE, Jalaguier E, Roelofs R, Yildirim S et al.
Oxides based resistive switching memories. In Rogers DJ, Look DC, Teherani FH, editors, Oxide-based Materials and Devices XII. SPIE. 2021. 2585681. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2585681
Author
Bibtex
@inproceedings{a9f4bb551b964a3580019cb8f0c42504,
title = "Oxides based resistive switching memories",
abstract = "This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers. Two terminal memory cells based on resistive devices as oxides, phase change materials or magnetism are discussed in terms of power consumption, read/write speeds, scalability and effective cost. The experimental results are focused on oxide RRAMs with an emphasis on resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics.",
author = "Seref Kalem and Tekin, {Serdar B.} and Kaya, {Zahit E.} and Eric Jalaguier and Robin Roelofs and Saffet Yildirim and Ozgur Yavuzcetin and Christian Wenger",
year = "2021",
month = mar,
day = "5",
doi = "10.1117/12.2585681",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Rogers, {David J.} and Look, {David C.} and Teherani, {Ferechteh H.}",
booktitle = "Oxide-based Materials and Devices XII",
}
RIS
TY - GEN
T1 - Oxides based resistive switching memories
AU - Kalem, Seref
AU - Tekin, Serdar B.
AU - Kaya, Zahit E.
AU - Jalaguier, Eric
AU - Roelofs, Robin
AU - Yildirim, Saffet
AU - Yavuzcetin, Ozgur
AU - Wenger, Christian
PY - 2021/3/5
Y1 - 2021/3/5
N2 - This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers. Two terminal memory cells based on resistive devices as oxides, phase change materials or magnetism are discussed in terms of power consumption, read/write speeds, scalability and effective cost. The experimental results are focused on oxide RRAMs with an emphasis on resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics.
AB - This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers. Two terminal memory cells based on resistive devices as oxides, phase change materials or magnetism are discussed in terms of power consumption, read/write speeds, scalability and effective cost. The experimental results are focused on oxide RRAMs with an emphasis on resistive switching of Metal/HfO2/Metal memory stacks and associated physical and electrical characteristics.
U2 - 10.1117/12.2585681
DO - 10.1117/12.2585681
M3 - Conference contribution/Paper
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Oxide-based Materials and Devices XII
A2 - Rogers, David J.
A2 - Look, David C.
A2 - Teherani, Ferechteh H.
PB - SPIE
ER -
