Home > Research > Publications & Outputs > Parity effect in superconducting aluminum singl...

Links

Text available via DOI:

View graph of relations

Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Research output: Contribution to journalJournal articlepeer-review

Published
  • T. Yamamoto
  • Y. Nakamura
  • Yuri Pashkin
  • Oleg V. Astafiev
  • Jaw-Shen Tsai
Close
Article number212509
<mark>Journal publication date</mark>22/05/2006
<mark>Journal</mark>Applied Physics Letters
Issue number21
Volume88
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockade
devices. The method is based on creation of a proper energy gap profile along the device. In contrast
to the previously used techniques, the energy gap is controlled by the film thickness. Our transport
measurements confirm that the quasiparticle poisoning is suppressed and clear 2e periodicity is
observed only when the island is made much thinner than the leads. This result is consistent with the
existing model and provides a simple method to suppress quasiparticle poisoning.