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Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

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Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness. / Yamamoto, T.; Nakamura, Y.; Pashkin, Yuri et al.
In: Applied Physics Letters, Vol. 88, No. 21, 212509, 22.05.2006.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Yamamoto, T, Nakamura, Y, Pashkin, Y, Astafiev, OV & Tsai, J-S 2006, 'Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness', Applied Physics Letters, vol. 88, no. 21, 212509. https://doi.org/10.1063/1.2207555

APA

Yamamoto, T., Nakamura, Y., Pashkin, Y., Astafiev, O. V., & Tsai, J-S. (2006). Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness. Applied Physics Letters, 88(21), Article 212509. https://doi.org/10.1063/1.2207555

Vancouver

Yamamoto T, Nakamura Y, Pashkin Y, Astafiev OV, Tsai J-S. Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness. Applied Physics Letters. 2006 May 22;88(21):212509. doi: 10.1063/1.2207555

Author

Yamamoto, T. ; Nakamura, Y. ; Pashkin, Yuri et al. / Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness. In: Applied Physics Letters. 2006 ; Vol. 88, No. 21.

Bibtex

@article{c18464b0c3a346a0ac39ec543e8b013b,
title = "Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness",
abstract = "We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockadedevices. The method is based on creation of a proper energy gap profile along the device. In contrastto the previously used techniques, the energy gap is controlled by the film thickness. Our transportmeasurements confirm that the quasiparticle poisoning is suppressed and clear 2e periodicity isobserved only when the island is made much thinner than the leads. This result is consistent with theexisting model and provides a simple method to suppress quasiparticle poisoning.",
author = "T. Yamamoto and Y. Nakamura and Yuri Pashkin and Astafiev, {Oleg V.} and Jaw-Shen Tsai",
year = "2006",
month = may,
day = "22",
doi = "10.1063/1.2207555",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "21",

}

RIS

TY - JOUR

T1 - Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

AU - Yamamoto, T.

AU - Nakamura, Y.

AU - Pashkin, Yuri

AU - Astafiev, Oleg V.

AU - Tsai, Jaw-Shen

PY - 2006/5/22

Y1 - 2006/5/22

N2 - We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockadedevices. The method is based on creation of a proper energy gap profile along the device. In contrastto the previously used techniques, the energy gap is controlled by the film thickness. Our transportmeasurements confirm that the quasiparticle poisoning is suppressed and clear 2e periodicity isobserved only when the island is made much thinner than the leads. This result is consistent with theexisting model and provides a simple method to suppress quasiparticle poisoning.

AB - We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockadedevices. The method is based on creation of a proper energy gap profile along the device. In contrastto the previously used techniques, the energy gap is controlled by the film thickness. Our transportmeasurements confirm that the quasiparticle poisoning is suppressed and clear 2e periodicity isobserved only when the island is made much thinner than the leads. This result is consistent with theexisting model and provides a simple method to suppress quasiparticle poisoning.

U2 - 10.1063/1.2207555

DO - 10.1063/1.2207555

M3 - Journal article

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212509

ER -