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pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice

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<mark>Journal publication date</mark>22/11/2024
<mark>Journal</mark>Optics Letters
Issue number23
Volume49
Number of pages4
Pages (from-to)6769-6772
Publication StatusPublished
<mark>Original language</mark>English

Abstract

An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10−4 A/cm2 and a peak responsivity of 0.38 A/W under a reverse bias of −1 V at 300 K. The detector shows a peak detectivity of 1.62 × 1011 cm·Hz1/2/W and 4.63 × 1010 cm·Hz1/2/W under a reverse bias of −1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.