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Peculiarities of the hydrogenated In(AsN) alloy

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Peculiarities of the hydrogenated In(AsN) alloy. / Birindelli, Simone; Kesaria, Manoj; Giubertoni, D et al.

In: Semiconductor Science and Technology, Vol. 30, 14.09.2015, p. 105030.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Birindelli, S, Kesaria, M, Giubertoni, D, Pettinari, G, Velichko, AV, Zhuang, Q, Krier, A, Patane, A, Polimeni, A & Capizzi, M 2015, 'Peculiarities of the hydrogenated In(AsN) alloy', Semiconductor Science and Technology, vol. 30, pp. 105030. https://doi.org/10.1088/0268-1242/30/10/105030

APA

Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A., & Capizzi, M. (2015). Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology, 30, 105030. https://doi.org/10.1088/0268-1242/30/10/105030

Vancouver

Birindelli S, Kesaria M, Giubertoni D, Pettinari G, Velichko AV, Zhuang Q et al. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology. 2015 Sep 14;30:105030. doi: 10.1088/0268-1242/30/10/105030

Author

Birindelli, Simone ; Kesaria, Manoj ; Giubertoni, D et al. / Peculiarities of the hydrogenated In(AsN) alloy. In: Semiconductor Science and Technology. 2015 ; Vol. 30. pp. 105030.

Bibtex

@article{b86e95870ae14786a6f0a87735f65da9,
title = "Peculiarities of the hydrogenated In(AsN) alloy",
abstract = "The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.",
author = "Simone Birindelli and Manoj Kesaria and D Giubertoni and G Pettinari and A.V. Velichko and Qiandong Zhuang and Anthony Krier and A. Patane and A. Polimeni and Mario Capizzi",
note = " This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0268-1242/30/10/105030",
year = "2015",
month = sep,
day = "14",
doi = "10.1088/0268-1242/30/10/105030",
language = "English",
volume = "30",
pages = "105030",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",

}

RIS

TY - JOUR

T1 - Peculiarities of the hydrogenated In(AsN) alloy

AU - Birindelli, Simone

AU - Kesaria, Manoj

AU - Giubertoni, D

AU - Pettinari, G

AU - Velichko, A.V.

AU - Zhuang, Qiandong

AU - Krier, Anthony

AU - Patane, A.

AU - Polimeni, A.

AU - Capizzi, Mario

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0268-1242/30/10/105030

PY - 2015/9/14

Y1 - 2015/9/14

N2 - The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.

AB - The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.

U2 - 10.1088/0268-1242/30/10/105030

DO - 10.1088/0268-1242/30/10/105030

M3 - Journal article

VL - 30

SP - 105030

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -