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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Peculiarities of the hydrogenated In(AsN) alloy
AU - Birindelli, Simone
AU - Kesaria, Manoj
AU - Giubertoni, D
AU - Pettinari, G
AU - Velichko, A.V.
AU - Zhuang, Qiandong
AU - Krier, Anthony
AU - Patane, A.
AU - Polimeni, A.
AU - Capizzi, Mario
N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0268-1242/30/10/105030
PY - 2015/9/14
Y1 - 2015/9/14
N2 - The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.
AB - The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.
U2 - 10.1088/0268-1242/30/10/105030
DO - 10.1088/0268-1242/30/10/105030
M3 - Journal article
VL - 30
SP - 105030
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
ER -