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Photoluminescence of two-dimensional GaTe and GaSe films

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number035010
<mark>Journal publication date</mark>30/07/2015
<mark>Journal</mark>2D Materials
Issue number3
Number of pages9
Publication StatusPublished
<mark>Original language</mark>English


Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.