Rights statement: Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Final published version, 1.96 MB, PDF document
Available under license: CC BY
Final published version
Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Photoluminescence of two-dimensional GaTe and GaSe films. / Del Pozo-Zamudio, O.; Schwarz, S.; Sich, M. et al.
In: 2D Materials, Vol. 2, No. 3, 035010, 30.07.2015.Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Photoluminescence of two-dimensional GaTe and GaSe films
AU - Del Pozo-Zamudio, O.
AU - Schwarz, S.
AU - Sich, M.
AU - Bayer, M.
AU - Schofield, R.
AU - A. Chekhovich, E.
AU - Robinson, Benjamin
AU - Kay, Nicholas
AU - Kolosov, Oleg
AU - Dmitriev, A.
AU - Lashkia, George V.
AU - Borisenko, D.
AU - Kolesnikov, N.
AU - Tartakovskii, A. I.
PY - 2015/7/30
Y1 - 2015/7/30
N2 - Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.
AB - Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.
KW - 2D semiconductors
KW - III-VI materials
KW - optical properties
KW - photoluminescence
U2 - 10.1088/2053-1583/2/3/035010
DO - 10.1088/2053-1583/2/3/035010
M3 - Journal article
VL - 2
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035010
ER -