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Photoluminescence of two-dimensional GaTe and GaSe films

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Photoluminescence of two-dimensional GaTe and GaSe films. / Del Pozo-Zamudio, O.; Schwarz, S.; Sich, M. et al.
In: 2D Materials, Vol. 2, No. 3, 035010, 30.07.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Del Pozo-Zamudio, O, Schwarz, S, Sich, M, Bayer, M, Schofield, R, A. Chekhovich, E, Robinson, B, Kay, N, Kolosov, O, Dmitriev, A, Lashkia, GV, Borisenko, D, Kolesnikov, N & Tartakovskii, AI 2015, 'Photoluminescence of two-dimensional GaTe and GaSe films', 2D Materials, vol. 2, no. 3, 035010. https://doi.org/10.1088/2053-1583/2/3/035010

APA

Del Pozo-Zamudio, O., Schwarz, S., Sich, M., Bayer, M., Schofield, R., A. Chekhovich, E., Robinson, B., Kay, N., Kolosov, O., Dmitriev, A., Lashkia, G. V., Borisenko, D., Kolesnikov, N., & Tartakovskii, A. I. (2015). Photoluminescence of two-dimensional GaTe and GaSe films. 2D Materials, 2(3), Article 035010. https://doi.org/10.1088/2053-1583/2/3/035010

Vancouver

Del Pozo-Zamudio O, Schwarz S, Sich M, Bayer M, Schofield R, A. Chekhovich E et al. Photoluminescence of two-dimensional GaTe and GaSe films. 2D Materials. 2015 Jul 30;2(3):035010. doi: 10.1088/2053-1583/2/3/035010

Author

Del Pozo-Zamudio, O. ; Schwarz, S. ; Sich, M. et al. / Photoluminescence of two-dimensional GaTe and GaSe films. In: 2D Materials. 2015 ; Vol. 2, No. 3.

Bibtex

@article{db18634f75c14ea5a713bec551e49725,
title = "Photoluminescence of two-dimensional GaTe and GaSe films",
abstract = "Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.",
keywords = "2D semiconductors, III-VI materials, optical properties, photoluminescence",
author = "{Del Pozo-Zamudio}, O. and S. Schwarz and M. Sich and M. Bayer and R. Schofield and {A. Chekhovich}, E. and Benjamin Robinson and Nicholas Kay and Oleg Kolosov and A. Dmitriev and Lashkia, {George V.} and D. Borisenko and N. Kolesnikov and Tartakovskii, {A. I.}",
year = "2015",
month = jul,
day = "30",
doi = "10.1088/2053-1583/2/3/035010",
language = "English",
volume = "2",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Photoluminescence of two-dimensional GaTe and GaSe films

AU - Del Pozo-Zamudio, O.

AU - Schwarz, S.

AU - Sich, M.

AU - Bayer, M.

AU - Schofield, R.

AU - A. Chekhovich, E.

AU - Robinson, Benjamin

AU - Kay, Nicholas

AU - Kolosov, Oleg

AU - Dmitriev, A.

AU - Lashkia, George V.

AU - Borisenko, D.

AU - Kolesnikov, N.

AU - Tartakovskii, A. I.

PY - 2015/7/30

Y1 - 2015/7/30

N2 - Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.

AB - Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10^4–10^5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuous-wave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.

KW - 2D semiconductors

KW - III-VI materials

KW - optical properties

KW - photoluminescence

U2 - 10.1088/2053-1583/2/3/035010

DO - 10.1088/2053-1583/2/3/035010

M3 - Journal article

VL - 2

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 3

M1 - 035010

ER -