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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Photoluminescence Properties of Type-II GaSb/GaAs Quantum Rings
AU - Gandan, Shumithira
AU - Musial, Anna
AU - Rudno-Rudzinsk, Wojciech
AU - Mikulicz, Marek
AU - Montesdeoca Cardenes, Denise
AU - Schmidt, Michael
AU - Morales, Juan
AU - Marshall, Andrew
AU - Krier, Anthony
AU - Carrington, Peter
AU - Sek, Grzegorz
PY - 2025/8/21
Y1 - 2025/8/21
N2 - Type-II quantum rings (QRs) exhibit unique physics with great potential for future technologies. In this work, the magneto-optical properties and carrier dynamics of single- and ten-layer stacked GaSb/GaAs QR ensembles fabricated by molecular beam epitaxy are investigated. Activation energies extracted in both single- and ten-layer structures with temperature-dependent photoluminescence (PL), establish recombination dynamics closely linked to the growth method of the nanostructures. Clear optical absorption characteristics are also determined with PL-excitation experiments. In addition, transient temperature-dependent PL reveals distinct recombination pathways through nontrivial carrier decay behavior. With increasing excitation power density, a strong blue shift in peak position energies is observed due to evolving carrier kinetics across low and high excitation regimes. Finally, optical Aharonov–Bohm oscillations are demonstrated for the first time in type-II QRs. The data presented here are expected to advance the optimization of growth and physical properties of GaSb/GaAs QRs.
AB - Type-II quantum rings (QRs) exhibit unique physics with great potential for future technologies. In this work, the magneto-optical properties and carrier dynamics of single- and ten-layer stacked GaSb/GaAs QR ensembles fabricated by molecular beam epitaxy are investigated. Activation energies extracted in both single- and ten-layer structures with temperature-dependent photoluminescence (PL), establish recombination dynamics closely linked to the growth method of the nanostructures. Clear optical absorption characteristics are also determined with PL-excitation experiments. In addition, transient temperature-dependent PL reveals distinct recombination pathways through nontrivial carrier decay behavior. With increasing excitation power density, a strong blue shift in peak position energies is observed due to evolving carrier kinetics across low and high excitation regimes. Finally, optical Aharonov–Bohm oscillations are demonstrated for the first time in type-II QRs. The data presented here are expected to advance the optimization of growth and physical properties of GaSb/GaAs QRs.
U2 - 10.1002/adpr.202500125
DO - 10.1002/adpr.202500125
M3 - Journal article
JO - Advanced Photonics Research
JF - Advanced Photonics Research
SN - 2699-9293
ER -