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    Rights statement: Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Research output: Contribution to journalJournal articlepeer-review

Published
  • Ofogh Tizno
  • Bahram Ganjipour
  • Magnus Heurlin
  • Claes Thelander
  • Magnus T Borgström
  • Lars Samuelson
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Article number113501
<mark>Journal publication date</mark>13/03/2017
<mark>Journal</mark>Applied Physics Letters
Issue number11
Volume110
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.

Bibliographic note

Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.