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    Rights statement: Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Radial tunnel diodes based on InP/InGaAs core-shell nanowires

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Radial tunnel diodes based on InP/InGaAs core-shell nanowires. / Tizno, Ofogh; Ganjipour, Bahram; Heurlin, Magnus; Thelander, Claes; Borgström , Magnus T; Samuelson, Lars.

In: Applied Physics Letters, Vol. 110, No. 11, 113501, 13.03.2017.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Tizno, O, Ganjipour, B, Heurlin, M, Thelander, C, Borgström , MT & Samuelson, L 2017, 'Radial tunnel diodes based on InP/InGaAs core-shell nanowires', Applied Physics Letters, vol. 110, no. 11, 113501. https://doi.org/10.1063/1.4978271

APA

Tizno, O., Ganjipour, B., Heurlin, M., Thelander, C., Borgström , M. T., & Samuelson, L. (2017). Radial tunnel diodes based on InP/InGaAs core-shell nanowires. Applied Physics Letters, 110(11), [113501]. https://doi.org/10.1063/1.4978271

Vancouver

Tizno O, Ganjipour B, Heurlin M, Thelander C, Borgström MT, Samuelson L. Radial tunnel diodes based on InP/InGaAs core-shell nanowires. Applied Physics Letters. 2017 Mar 13;110(11). 113501. https://doi.org/10.1063/1.4978271

Author

Tizno, Ofogh ; Ganjipour, Bahram ; Heurlin, Magnus ; Thelander, Claes ; Borgström , Magnus T ; Samuelson, Lars. / Radial tunnel diodes based on InP/InGaAs core-shell nanowires. In: Applied Physics Letters. 2017 ; Vol. 110, No. 11.

Bibtex

@article{347e1408a15949159702c3285d914c65,
title = "Radial tunnel diodes based on InP/InGaAs core-shell nanowires",
abstract = "We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.",
keywords = "nanowires, core/shell nanowire, Isaki Diode, Tunnel Diodes, Radial Tunnel Diode, III-V Semiconductors",
author = "Ofogh Tizno and Bahram Ganjipour and Magnus Heurlin and Claes Thelander and Borgstr{\"o}m, {Magnus T} and Lars Samuelson",
note = "Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
year = "2017",
month = mar,
day = "13",
doi = "10.1063/1.4978271",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Radial tunnel diodes based on InP/InGaAs core-shell nanowires

AU - Tizno, Ofogh

AU - Ganjipour, Bahram

AU - Heurlin, Magnus

AU - Thelander, Claes

AU - Borgström , Magnus T

AU - Samuelson, Lars

N1 - Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2017/3/13

Y1 - 2017/3/13

N2 - We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.

AB - We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.

KW - nanowires

KW - core/shell nanowire

KW - Isaki Diode

KW - Tunnel Diodes

KW - Radial Tunnel Diode

KW - III-V Semiconductors

U2 - 10.1063/1.4978271

DO - 10.1063/1.4978271

M3 - Journal article

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113501

ER -