Rights statement: Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Accepted author manuscript, 6.57 MB, PDF document
Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Radial tunnel diodes based on InP/InGaAs core-shell nanowires
AU - Tizno, Ofogh
AU - Ganjipour, Bahram
AU - Heurlin, Magnus
AU - Thelander, Claes
AU - Borgström , Magnus T
AU - Samuelson, Lars
N1 - Copyright 2017 American Institute of Physics. The following article appeared in Applied Physics Letters, 110 (11), 2017 and may be found at http://dx.doi.org/10.1063/1.4978271 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2017/3/13
Y1 - 2017/3/13
N2 - We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.
AB - We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.
KW - nanowires
KW - core/shell nanowire
KW - Isaki Diode
KW - Tunnel Diodes
KW - Radial Tunnel Diode
KW - III-V Semiconductors
U2 - 10.1063/1.4978271
DO - 10.1063/1.4978271
M3 - Journal article
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 113501
ER -