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Rashba spin-splitting in narrow gap III-V semiconductor quantum wells

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>01/2004
<mark>Journal</mark>Physica E: Low-dimensional Systems and Nanostructures
Issue number3-4
Number of pages3
Pages (from-to)433-435
Publication StatusPublished
<mark>Original language</mark>English


Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.