Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 01/2004 |
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<mark>Journal</mark> | Physica E: Low-dimensional Systems and Nanostructures |
Issue number | 3-4 |
Volume | 20 |
Number of pages | 3 |
Pages (from-to) | 433-435 |
Publication Status | Published |
<mark>Original language</mark> | English |
Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.