Rashba spin-splitting in narrow gap III-V semiconductor quantum wells

Physics

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Rashba spin-splitting in narrow gap III-V semiconductor quantum wells. / Stanley, J. P. ; Pattinson, N. ; Lambert, C. J. et al.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, No. 3-4, 01.2004, p. 433-435.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Stanley, JP, Pattinson, N, Lambert, CJ & Jefferson, JH 2004, 'Rashba spin-splitting in narrow gap III-V semiconductor quantum wells', Physica E: Low-dimensional Systems and Nanostructures, vol. 20, no. 3-4, pp. 433-435. https://doi.org/10.1016/j.physe.2003.08.052

APA

Stanley, J. P., Pattinson, N., Lambert, C. J., & Jefferson, J. H. (2004). Rashba spin-splitting in narrow gap III-V semiconductor quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 20(3-4), 433-435. https://doi.org/10.1016/j.physe.2003.08.052

Vancouver

Stanley JP, Pattinson N, Lambert CJ , Jefferson JH. Rashba spin-splitting in narrow gap III-V semiconductor quantum wells. Physica E: Low-dimensional Systems and Nanostructures. 2004 Jan;20(3-4):433-435. doi: 10.1016/j.physe.2003.08.052

Author

Stanley, J. P. ; Pattinson, N. ; Lambert, C. J. et al. / Rashba spin-splitting in narrow gap III-V semiconductor quantum wells. In: Physica E: Low-dimensional Systems and Nanostructures. 2004 ; Vol. 20, No. 3-4. pp. 433-435.

Bibtex

@article{608af6e6ca0a4bd3853a4cb112574ab6,

title = "Rashba spin-splitting in narrow gap III-V semiconductor quantum wells",

abstract = "Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.",

keywords = "Spintronics, Rashba spin-splitting , Quantum well",

author = "Stanley, {J. P.} and N. Pattinson and Lambert, {C. J.} and Jefferson, {J. H.}",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.052",

language = "English",

volume = "20",

pages = "433--435",

journal = "Physica E: Low-dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4",

}

RIS

TY - JOUR

T1 - Rashba spin-splitting in narrow gap III-V semiconductor quantum wells

AU - Stanley, J. P.

AU - Pattinson, N.

AU - Lambert, C. J.

AU - Jefferson, J. H.

PY - 2004/1

Y1 - 2004/1

N2 - Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.

AB - Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.

KW - Spintronics

KW - Rashba spin-splitting

KW - Quantum well

U2 - 10.1016/j.physe.2003.08.052

DO - 10.1016/j.physe.2003.08.052

M3 - Journal article

VL - 20

SP - 433

EP - 435

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3-4

ER -

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