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Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite

Research output: Contribution to Journal/MagazineLetterpeer-review

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Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite. / Anyebe, Ezekiel; Sanchez, Ana; Hindmarsh, S. et al.
In: Nano Letters, Vol. 15, No. 7, 18.06.2015, p. 4348-4355.

Research output: Contribution to Journal/MagazineLetterpeer-review

Harvard

Anyebe, E, Sanchez, A, Hindmarsh, S, Chen, X, Shao, J, Rajpalke, MK, Veal, TD, Robinson, B, Kolosov, O, Anderson, F, Sandaram, R, Wang, ZM, Falko, V & Zhuang, Q 2015, 'Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite', Nano Letters, vol. 15, no. 7, pp. 4348-4355. https://doi.org/10.1021/acs.nanolett.5b00411

APA

Anyebe, E., Sanchez, A., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B., Kolosov, O., Anderson, F., Sandaram, R., Wang, Z. M., Falko, V., & Zhuang, Q. (2015). Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite. Nano Letters, 15(7), 4348-4355. https://doi.org/10.1021/acs.nanolett.5b00411

Vancouver

Anyebe E, Sanchez A, Hindmarsh S, Chen X, Shao J, Rajpalke MK et al. Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite. Nano Letters. 2015 Jun 18;15(7):4348-4355. Epub 2015 Jun 18. doi: 10.1021/acs.nanolett.5b00411

Author

Anyebe, Ezekiel ; Sanchez, Ana ; Hindmarsh, S. et al. / Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite. In: Nano Letters. 2015 ; Vol. 15, No. 7. pp. 4348-4355.

Bibtex

@article{9dad65588e534158aa2bcccf7c169964,
title = "Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite",
abstract = "The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.",
keywords = "InAsSb, nanowire, self-catalyzed, molecular beam epitaxy, van der Waals, aspect ratio, graphite, graphene",
author = "Ezekiel Anyebe and Ana Sanchez and S. Hindmarsh and X. Chen and J. Shao and Rajpalke, {Mohana K.} and Veal, {Tim D.} and Benjamin Robinson and Oleg Kolosov and Frazer Anderson and R. Sandaram and Wang, {Z. M.} and Vladimir Falko and Qiandong Zhuang",
note = "Post Print: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright {\textcopyright} 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00411",
year = "2015",
month = jun,
day = "18",
doi = "10.1021/acs.nanolett.5b00411",
language = "English",
volume = "15",
pages = "4348--4355",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite

AU - Anyebe, Ezekiel

AU - Sanchez, Ana

AU - Hindmarsh, S.

AU - Chen, X.

AU - Shao, J.

AU - Rajpalke, Mohana K.

AU - Veal, Tim D.

AU - Robinson, Benjamin

AU - Kolosov, Oleg

AU - Anderson, Frazer

AU - Sandaram, R.

AU - Wang, Z. M.

AU - Falko, Vladimir

AU - Zhuang, Qiandong

N1 - Post Print: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00411

PY - 2015/6/18

Y1 - 2015/6/18

N2 - The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

AB - The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

KW - InAsSb

KW - nanowire

KW - self-catalyzed

KW - molecular beam epitaxy

KW - van der Waals

KW - aspect ratio

KW - graphite

KW - graphene

U2 - 10.1021/acs.nanolett.5b00411

DO - 10.1021/acs.nanolett.5b00411

M3 - Letter

VL - 15

SP - 4348

EP - 4355

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -