Rights statement: Post Print: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00411
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Available under license: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Licence: CC BY: Creative Commons Attribution 4.0 International License
Research output: Contribution to Journal/Magazine › Letter › peer-review
Research output: Contribution to Journal/Magazine › Letter › peer-review
}
TY - JOUR
T1 - Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite
AU - Anyebe, Ezekiel
AU - Sanchez, Ana
AU - Hindmarsh, S.
AU - Chen, X.
AU - Shao, J.
AU - Rajpalke, Mohana K.
AU - Veal, Tim D.
AU - Robinson, Benjamin
AU - Kolosov, Oleg
AU - Anderson, Frazer
AU - Sandaram, R.
AU - Wang, Z. M.
AU - Falko, Vladimir
AU - Zhuang, Qiandong
N1 - Post Print: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00411
PY - 2015/6/18
Y1 - 2015/6/18
N2 - The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.
AB - The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.
KW - InAsSb
KW - nanowire
KW - self-catalyzed
KW - molecular beam epitaxy
KW - van der Waals
KW - aspect ratio
KW - graphite
KW - graphene
U2 - 10.1021/acs.nanolett.5b00411
DO - 10.1021/acs.nanolett.5b00411
M3 - Letter
VL - 15
SP - 4348
EP - 4355
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 7
ER -