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Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

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Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb". / Craig, Adam; Marshall, Andrew Robert Julian; Tian, Z.-B. et al.
In: Infrared Physics and Technology, Vol. 70, 05.2015, p. 107-110.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Craig, A, Marshall, ARJ, Tian, Z-B & Krishna, S 2015, 'Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"', Infrared Physics and Technology, vol. 70, pp. 107-110. https://doi.org/10.1016/j.infrared.2015.05.006

APA

Craig, A., Marshall, A. R. J., Tian, Z-B., & Krishna, S. (2015). Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb". Infrared Physics and Technology, 70, 107-110. https://doi.org/10.1016/j.infrared.2015.05.006

Vancouver

Craig A, Marshall ARJ, Tian Z-B, Krishna S. Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb". Infrared Physics and Technology. 2015 May;70:107-110. Epub 2015 May 12. doi: 10.1016/j.infrared.2015.05.006

Author

Craig, Adam ; Marshall, Andrew Robert Julian ; Tian, Z.-B. et al. / Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb". In: Infrared Physics and Technology. 2015 ; Vol. 70. pp. 107-110.

Bibtex

@article{93035aed615d454da3a01c7d07dbabcc,
title = "Reprint of {"}mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb{"}",
abstract = "InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.",
keywords = "nBn photodetector, Interface misfit epitaxy, Dark currents",
author = "Adam Craig and Marshall, {Andrew Robert Julian} and Z.-B. Tian and S. Krishna",
year = "2015",
month = may,
doi = "10.1016/j.infrared.2015.05.006",
language = "English",
volume = "70",
pages = "107--110",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

AU - Craig, Adam

AU - Marshall, Andrew Robert Julian

AU - Tian, Z.-B.

AU - Krishna, S.

PY - 2015/5

Y1 - 2015/5

N2 - InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

AB - InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.

KW - nBn photodetector

KW - Interface misfit epitaxy

KW - Dark currents

U2 - 10.1016/j.infrared.2015.05.006

DO - 10.1016/j.infrared.2015.05.006

M3 - Journal article

VL - 70

SP - 107

EP - 110

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

ER -