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Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

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Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm. / Al-Saymari, F.A.; Craig, A.P.; Lu, Q. et al.
In: Applied Physics Letters, Vol. 123, No. 20, 201103, 13.11.2023.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Al-Saymari, FA, Craig, AP, Lu, Q, Hanks, LA, Marshall, ARJ & Krier, A 2023, 'Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm', Applied Physics Letters, vol. 123, no. 20, 201103. https://doi.org/10.1063/5.0174237

APA

Al-Saymari, F. A., Craig, A. P., Lu, Q., Hanks, L. A., Marshall, A. R. J., & Krier, A. (2023). Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm. Applied Physics Letters, 123(20), Article 201103. https://doi.org/10.1063/5.0174237

Vancouver

Al-Saymari FA, Craig AP, Lu Q, Hanks LA, Marshall ARJ, Krier A. Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm. Applied Physics Letters. 2023 Nov 13;123(20):201103. doi: 10.1063/5.0174237

Author

Al-Saymari, F.A. ; Craig, A.P. ; Lu, Q. et al. / Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm. In: Applied Physics Letters. 2023 ; Vol. 123, No. 20.

Bibtex

@article{185690dd1528453ba89b718746dbf8c0,
title = "Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm",
abstract = "We investigated the design, growth, fabrication, and characterization of InAs/GaAsSb SLS resonant cavity light emitting diodes (RCLEDs) grown on InAs by molecular beam epitaxy. The structure consists of a 1λ-thick micro-cavity positioned between two lattice-matched AlAsSb/GaAsSb distributed Bragg reflector mirrors (DBRs). A 44-pair InAs/GaAsSb SLS active region is placed at the antinode of the electric field intensity in the center of the cavity. Electroluminescence emission spectra were recorded at room-temperature. Due to the resonant cavity effect, 400 μm-diameter SLS RCLEDs exhibited emission spectra peaked at 4.587 μm with a narrow spectral linewidth of 52 nm. A high-spectral intensity of >3 mW cm−2 nm−1 was achieved for the 400 μm SLS RCLED using 1% duty cycle to avoid Joule heating. Furthermore, temperature dependence of the emission spectra of the RCLED showed excellent temperature stability, with a rate of 0.34 nm/K. Compared to existing mid-infrared 5-stage InAs/GaAsSb SLS ICLEDs operating at ∼4.5 μm, the (400 μm-diameter) InAs/GaAsSb SLS RCLEDs exhibited 10.5× brighter spectral intensity, 14× narrower spectral linewidth, and 8× improvement in the temperature stability. Owing to these attractive features, our SLS RCLEDs could be used to develop the next generation CO gas instruments and active imaging.",
author = "F.A. Al-Saymari and A.P. Craig and Q. Lu and L.A. Hanks and A.R.J. Marshall and A. Krier",
note = "Export Date: 22 November 2023",
year = "2023",
month = nov,
day = "13",
doi = "10.1063/5.0174237",
language = "English",
volume = "123",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "20",

}

RIS

TY - JOUR

T1 - Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

AU - Al-Saymari, F.A.

AU - Craig, A.P.

AU - Lu, Q.

AU - Hanks, L.A.

AU - Marshall, A.R.J.

AU - Krier, A.

N1 - Export Date: 22 November 2023

PY - 2023/11/13

Y1 - 2023/11/13

N2 - We investigated the design, growth, fabrication, and characterization of InAs/GaAsSb SLS resonant cavity light emitting diodes (RCLEDs) grown on InAs by molecular beam epitaxy. The structure consists of a 1λ-thick micro-cavity positioned between two lattice-matched AlAsSb/GaAsSb distributed Bragg reflector mirrors (DBRs). A 44-pair InAs/GaAsSb SLS active region is placed at the antinode of the electric field intensity in the center of the cavity. Electroluminescence emission spectra were recorded at room-temperature. Due to the resonant cavity effect, 400 μm-diameter SLS RCLEDs exhibited emission spectra peaked at 4.587 μm with a narrow spectral linewidth of 52 nm. A high-spectral intensity of >3 mW cm−2 nm−1 was achieved for the 400 μm SLS RCLED using 1% duty cycle to avoid Joule heating. Furthermore, temperature dependence of the emission spectra of the RCLED showed excellent temperature stability, with a rate of 0.34 nm/K. Compared to existing mid-infrared 5-stage InAs/GaAsSb SLS ICLEDs operating at ∼4.5 μm, the (400 μm-diameter) InAs/GaAsSb SLS RCLEDs exhibited 10.5× brighter spectral intensity, 14× narrower spectral linewidth, and 8× improvement in the temperature stability. Owing to these attractive features, our SLS RCLEDs could be used to develop the next generation CO gas instruments and active imaging.

AB - We investigated the design, growth, fabrication, and characterization of InAs/GaAsSb SLS resonant cavity light emitting diodes (RCLEDs) grown on InAs by molecular beam epitaxy. The structure consists of a 1λ-thick micro-cavity positioned between two lattice-matched AlAsSb/GaAsSb distributed Bragg reflector mirrors (DBRs). A 44-pair InAs/GaAsSb SLS active region is placed at the antinode of the electric field intensity in the center of the cavity. Electroluminescence emission spectra were recorded at room-temperature. Due to the resonant cavity effect, 400 μm-diameter SLS RCLEDs exhibited emission spectra peaked at 4.587 μm with a narrow spectral linewidth of 52 nm. A high-spectral intensity of >3 mW cm−2 nm−1 was achieved for the 400 μm SLS RCLED using 1% duty cycle to avoid Joule heating. Furthermore, temperature dependence of the emission spectra of the RCLED showed excellent temperature stability, with a rate of 0.34 nm/K. Compared to existing mid-infrared 5-stage InAs/GaAsSb SLS ICLEDs operating at ∼4.5 μm, the (400 μm-diameter) InAs/GaAsSb SLS RCLEDs exhibited 10.5× brighter spectral intensity, 14× narrower spectral linewidth, and 8× improvement in the temperature stability. Owing to these attractive features, our SLS RCLEDs could be used to develop the next generation CO gas instruments and active imaging.

U2 - 10.1063/5.0174237

DO - 10.1063/5.0174237

M3 - Journal article

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201103

ER -