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Resonant Cavity Enhanced Photodiodes in the Short-Wave Infrared for Spectroscopic Detection

Research output: Contribution to journalJournal articlepeer-review

Published
<mark>Journal publication date</mark>1/11/2020
<mark>Journal</mark>IEEE Photonics Technology Letters
Issue number21
Volume32
Number of pages4
Pages (from-to)1369-1372
Publication StatusPublished
Early online date22/09/20
<mark>Original language</mark>English

Abstract

The design, fabrication and characterization of resonant cavity enhanced photodiodes for the short-wave infrared has been investigated. An InGaAsSb absorber and AlGaSb barrier were used in an nBn structure, within a Fabry-Perot cavity bounded by AlAsSb/GaSb DBR mirrors. The resonant cavity design produced a narrow response at 2.25 μm, with a FWHM of ∼ 26 nm and peak responsivity of 0.9 A/W. The photodiodes exhibited high specific detectivities and low leakage currents at 300 K - 5×10^10 cmHz^1/2W^−1 and 0.2 mAcm^−2 respectively, with an applied bias voltage of −100 mV. A maximum specific detectivity of 1×10^11 cmHz^1/2W^−1 was achieved at 275 K and the detector continued to perform well at high temperatures - at 350 K the peak specific detectivity was 3×10^9 cmHz^1/2W^−1. The narrow resonant response of these detectors make them suitable for spectroscopic sensing, demonstrated by measurements of glucose concentrations in water. Concentrations as low as 1 % were discriminated, limited only by the associated electronic systems.

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©2020 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.