TY - JOUR

T1 - Resonant Cavity–Enhanced Photodiodes for Spectroscopy of C-H Bonds

AU - Bainbridge, Andrew

AU - Craig, Adam

AU - Al-Saymari, Furat

AU - Krier, Anthony

AU - Marshall, Andrew

PY - 2021/9/30

Y1 - 2021/9/30

N2 - Resonant cavity-enhanced photodiodes targeted within the spectral region of absorption by C-H bonds are demonstrated. The 3.0 – 3.3 μm region of the infrared spectrum contains many substances that are useful to measure spectroscopically. However, the measurement of individual substances requires a high spectral specificity, that is achieved by the resonant cavity photodiodes with spectral response widths of <40 nm . Two material systems are investigated for detection at this wavelength range—an InAs absorber on an InAs substrate and an InAsSb absorber lattice-matched to a GaSb substrate. The resonance wavelength of the InAs-based device responds at ≈3.3 μm, closely tuned to an absorption peak of methane to allow precise sensing of this gas. At 300 K a quantum efficiency of 52% is achieved, with a specific detectivity of 2.5×1010 cm√Hz/푊. The InAsSb-based device is sensitive at ≈3.7 μm, but the structure could be tuned to the methane absorption peak. Devices could be simply created to target other substances in the C−H absorption region by altering the layer thicknesses in the structure. Both structures can be used for spectrally specific gas sensing in this region of the infrared.

AB - Resonant cavity-enhanced photodiodes targeted within the spectral region of absorption by C-H bonds are demonstrated. The 3.0 – 3.3 μm region of the infrared spectrum contains many substances that are useful to measure spectroscopically. However, the measurement of individual substances requires a high spectral specificity, that is achieved by the resonant cavity photodiodes with spectral response widths of <40 nm . Two material systems are investigated for detection at this wavelength range—an InAs absorber on an InAs substrate and an InAsSb absorber lattice-matched to a GaSb substrate. The resonance wavelength of the InAs-based device responds at ≈3.3 μm, closely tuned to an absorption peak of methane to allow precise sensing of this gas. At 300 K a quantum efficiency of 52% is achieved, with a specific detectivity of 2.5×1010 cm√Hz/푊. The InAsSb-based device is sensitive at ≈3.7 μm, but the structure could be tuned to the methane absorption peak. Devices could be simply created to target other substances in the C−H absorption region by altering the layer thicknesses in the structure. Both structures can be used for spectrally specific gas sensing in this region of the infrared.

KW - gas sensing

KW - photodiodes

KW - resonant cavities

KW - spectroscopy

U2 - 10.1002/pssa.202100056

DO - 10.1002/pssa.202100056

M3 - Journal article

VL - 218

JO - physica status solidi (a)

JF - physica status solidi (a)

SN - 1862-6300

IS - 17

M1 - 2100056

ER -