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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

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  • Jordi Llobet
  • Emiljana Krali
  • Chen Wang
  • Jordi Arbiol
  • Mervyn E. Jones
  • Francesc Perez-Murano
  • Zahid A. K. Durrani
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Article number223501
<mark>Journal publication date</mark>30/11/2015
<mark>Journal</mark>Applied Physics Letters
Issue number22
Volume107
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.