Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Physics

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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor. / Llobet, Jordi; Krali, Emiljana; Wang, Chen et al.
In: Applied Physics Letters, Vol. 107, No. 22, 223501, 30.11.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Llobet, J, Krali, E, Wang, C, Arbiol, J, Jones, ME, Perez-Murano, F & Durrani, ZAK 2015, 'Resonant tunnelling features in a suspended silicon nanowire single-hole transistor', Applied Physics Letters, vol. 107, no. 22, 223501. https://doi.org/10.1063/1.4936757

APA

Llobet, J., Krali, E., Wang, C., Arbiol, J., Jones, M. E., Perez-Murano, F., & Durrani, Z. A. K. (2015). Resonant tunnelling features in a suspended silicon nanowire single-hole transistor. Applied Physics Letters, 107(22), Article 223501. https://doi.org/10.1063/1.4936757

Vancouver

Llobet J, Krali E, Wang C, Arbiol J, Jones ME, Perez-Murano F et al. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor. Applied Physics Letters. 2015 Nov 30;107(22):223501. doi: 10.1063/1.4936757

Author

Llobet, Jordi ; Krali, Emiljana ; Wang, Chen et al. / Resonant tunnelling features in a suspended silicon nanowire single-hole transistor. In: Applied Physics Letters. 2015 ; Vol. 107, No. 22.

Bibtex

@article{c59071453704447f9d531cb726d93100,

title = "Resonant tunnelling features in a suspended silicon nanowire single-hole transistor",

abstract = "Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.",

keywords = "nanowires, quantum dot, Raman spectroscopy , phonon spectrum",

author = "Jordi Llobet and Emiljana Krali and Chen Wang and Jordi Arbiol and Jones, {Mervyn E.} and Francesc Perez-Murano and Durrani, {Zahid A. K.}",

year = "2015",

month = nov,

day = "30",

doi = "10.1063/1.4936757",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "22",

}

RIS

TY - JOUR

T1 - Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

AU - Llobet, Jordi

AU - Krali, Emiljana

AU - Wang, Chen

AU - Arbiol, Jordi

AU - Jones, Mervyn E.

AU - Perez-Murano, Francesc

AU - Durrani, Zahid A. K.

PY - 2015/11/30

Y1 - 2015/11/30

N2 - Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

AB - Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

KW - nanowires

KW - quantum dot

KW - Raman spectroscopy

KW - phonon spectrum

U2 - 10.1063/1.4936757

DO - 10.1063/1.4936757

M3 - Journal article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223501

ER -

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