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Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation

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Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation. / Jamison, S.P.; Ersfeld, B.; Jaroszynski, D.A.
In: Current Applied Physics, Vol. 4, No. 2-4, 04.2004, p. 217-220.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Jamison, SP, Ersfeld, B & Jaroszynski, DA 2004, 'Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation', Current Applied Physics, vol. 4, no. 2-4, pp. 217-220. https://doi.org/10.1016/j.cap.2003.11.013

APA

Jamison, S. P., Ersfeld, B., & Jaroszynski, D. A. (2004). Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation. Current Applied Physics, 4(2-4), 217-220. https://doi.org/10.1016/j.cap.2003.11.013

Vancouver

Jamison SP, Ersfeld B, Jaroszynski DA. Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation. Current Applied Physics. 2004 Apr;4(2-4):217-220. Epub 2003 Dec 24. doi: 10.1016/j.cap.2003.11.013

Author

Jamison, S.P. ; Ersfeld, B. ; Jaroszynski, D.A. / Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation. In: Current Applied Physics. 2004 ; Vol. 4, No. 2-4. pp. 217-220.

Bibtex

@article{dccf6e1117c24cd9b11534ddef7cd500,
title = "Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation",
abstract = "Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.",
keywords = "THz generation, Photoconductive, Spectral hole burning",
author = "S.P. Jamison and B. Ersfeld and D.A. Jaroszynski",
year = "2004",
month = apr,
doi = "10.1016/j.cap.2003.11.013",
language = "English",
volume = "4",
pages = "217--220",
journal = "Current Applied Physics",
number = "2-4",

}

RIS

TY - JOUR

T1 - Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation

AU - Jamison, S.P.

AU - Ersfeld, B.

AU - Jaroszynski, D.A.

PY - 2004/4

Y1 - 2004/4

N2 - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

AB - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

KW - THz generation

KW - Photoconductive

KW - Spectral hole burning

U2 - 10.1016/j.cap.2003.11.013

DO - 10.1016/j.cap.2003.11.013

M3 - Journal article

VL - 4

SP - 217

EP - 220

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2-4

ER -