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Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: application to read-head sensors for ultrahigh-density magnetic recording

Research output: Contribution to journalJournal articlepeer-review

Published
  • S. A. Solin
  • D. R. Hines
  • Jaw-Shen Tsai
  • Yuri Pashkin
  • S. J. Chung
  • N. Goel
  • M. Santos
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<mark>Journal publication date</mark>01/2002
<mark>Journal</mark>IEEE Transactions on Magnetics
Issue number1
Volume38
Number of pages6
Pages (from-to)89-94
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.